DU28200M RF Power MOSFET Transistor Rev. V1 200 W, 2 - 175 MHz, 28 V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 20 A DS Power Dissipation P 389 W D Junction Temperature T 200 C J Storage Temperature T -65 to +150 C STG LETTER MILLIMETERS INCHES Thermal Resistance 0.45 C/W JC DIM MIN MAX MIN MAX A 30.35 30.61 1.195 1.205 TYPICAL DEVICE IMPEDANCE B 23.65 23.90 .931 .941 F (MHz) Z () Z () IN LOAD C 13.72 14.22 .540 .560 30 2.7 - j4.8 7.2 - j1.9 D 9.63 9.88 .379 3.89 100 1.6 - j3.0 5.25 - j1.4 E 9.40 9.65 .370 .389 150 1.5 - j2.0 5.0 - j0.7 F 9.40 9.65 .370 .389 175 1.6 - j1.0 5.2 - j0.6 G 5.59 5.84 .220 .230 200 1.8 - j0.5 5.5 - j0.5 H 18.80 19.30 .740 .760 J 9.40 9.65 .370 .380 V = 28V, I = 1000mA, P = 200 W DD DQ OUT K 3.12 3.38 .123 .133 Z is the series equivalent input impedance of the device IN L 1.47 1.57 .058 .062 from gate to source. M 2.39 2.74 .094 .108 N 5.03 5.69 .198 .224 Z is the optimum series equivalent load impedance LOAD as measured from drain to ground. P .05 .13 .002 .005 ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 25.0 mA DSS GS DS Drain-Source Leakage Current I - 5.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 5.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 500.0 mA GS(TH) DS DS Forward Transconductance G 2.5 - S V = 10.0 V , I = 5.0A , V = 1.0V, 80 s Pulse M DS DS GS Input Capacitance C - 225 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance C - 200 pF V = 28.0 V , F = 1.0 MHz OSS DS Reverse Capacitance C - 40 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 13 - dB V = 28.0 V, I = 1000 mA, P = 200.0 W F =175 MHz P DD DQ OUT Drain Efficiency 55 - % V = 28.0 V, I = 1000 mA, P = 200.0 W F =175 MHz D DD DQ OUT Load Mismatch Tolerance VSWR-T - 10:1 - V = 28.0 V, I = 1000 mA, P = 200.0 W F =175 MHz DD DQ OUT 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: DU28200M RF Power MOSFET Transistor Rev. V1 200 W, 2 - 175 MHz, 28 V Typical Broadband Performance Curves EFFICIENCY FREQUENCY GAIN FREQUENCY VS VS V =28 V I =100 mA P =200 W V =28 V I =1000 mA P =200 W DD DQ OUT DD DQ OUT 30 80 70 20 60 10 50 25 50 100 150 200 25 50 100 150 200 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT POWER INPUT VS V =28 V I =600 mA DD DQ 300 100MHz 30MHz 250 175MHz 200 150 100 50 0 0.5 1 2 3 4 5 POWER INPUT (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: