DU1215S RF Power MOSFET Transistor Rev. V1 15 W, 2 - 175 MHz, 12 V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices Specifically designed for 12 volt applications RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 4 A DS Power Dissipation P 87.5 W D Junction Temperature T 200 C J Storage Temperature T -55 to +150 C STG LETTER MILLIMETERS INCHES Thermal Resistance 2 C/W JC DIM MIN MAX MIN MAX TYPICAL DEVICE IMPEDANCE A 24.64 24.89 .970 .980 B 18.29 18.54 .720 .730 F (MHz) Z () Z () IN LOAD C 20.07 20.83 .790 .820 30 3.0 - j25 4.0 - j3.0 D 9.47 9.73 .373 .383 100 3.0 - j15 3.5 - j1.5 E 6.22 6.48 .245 .255 175 5.0 - j8 4.0 - j0.0 F 5.64 5.79 .222 .228 V = 12V, I = 100mA, P = 15W DD DQ OUT G 2.92 3.30 .115 .130 Z is the series equivalent input impedance of the device IN H 2.29 2.67 .090 .105 from gate to source. J 4.04 4.55 .159 .179 K 6.58 7.39 .259 .291 Z is the optimum series equivalent load impedance LOAD L .10 .15 .004 .006 as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 40 - V V = 0.0 V , I = 5.0 mA DSS GS DS Drain-Source Leakage Current I - 1.0 mA V = 15.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 1.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2..0 6.0 V V = 10.0 V , I = 100 mA GS(TH) DS DS Forward Transconductance G 0.5 - S V = 10.0 V , I = 1000 mA , V = 1.0 V M DS DS GS Input Capacitance C - 50 pF V = 12.0 V , F = 1.0 MHz ISS DS C Output Capacitance OSS - 60 pF V = 12.0 V , F = 1.0 MHz DS Reverse Capacitance C - 12 pF V = 12.0 V , F = 1.0 MHz RSS DS Power Gain GP 9.5 - dB V = 12.0 V, I = 100 mA, P = 15 W F =175 MHz DD DQ OUT Drain Efficiency 60 - % V = 12.0 V, I = 100 mA, P = 15 W F =175 MHz D DD DQ OUT Load Mismatch VSWR-T - 30:1 - V = 12.0 V, I = 100 mA, P = 15 W F =175 MHz DD DQ OUT 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: DU1215S RF Power MOSFET Transistor Rev. V1 15 W, 2 - 175 MHz, 12 V Typical Broadband Performance Curves EFFICIENCY FREQUENCY GAIN FREQUENCY VS VS V =12 V I =100mA P =15W V =12 V I =100 mA P =15 W DD DQ OUT DD DQ OUT 80 30 70 25 60 50 20 40 30 15 20 10 10 0 50 100 150 200 25 50 100 150 175 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT SUPPLY VOLTAGE POWER OUTPUT POWER INPUT VS VS V =12 V I =100 mA V =12 V F=175 MHz P =1.0 W DD DD DD IN 20 20 100MHz 30MHz 15 15 175MHz 10 10 5 5 0 0 0.1 0.2 0.3 0.5 0.75 1 1.5 2 2.5 3 10 15 SUPPLY VOLTAGE (V) POWER INPUT (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: