Document Number: MRFG35005AN Freescale Semiconductor Rev. 2, 6/2009 Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Typical Single-Carrier W-CDMA Performance: V = 12 Volts, I = DD DQ 80 mA, P = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = out 3.84 MHz, PAR = 8.5 dB 0.01% Probability on CCDF. 3.5 GHz, 4.5 W, 12 V Power Gain 11 dB POWER FET Drain Efficiency 26% GaAs PHEMT ACPR 5 MHz Offset -44 dBc in 3.84 MHz Channel Bandwidth 4.5 Watts P1dB 3550 MHz, CW Features Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity RoHS Compliant In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466-03, STYLE 1 PLD-1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V 15 Vdc DSS Gate-Source Voltage V -5 Vdc GS RF Input Power P 30 dBm in Storage Temperature Range T -65 to +150 C stg (1) Channel Temperature T 175 C ch Table 2. Thermal Characteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 13.7 C/W JC Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C 1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table 5. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Saturated Drain Current I 1.7 Adc DSS (V = 3.5 Vdc, V = 0 Vdc) DS GS Off State Leakage Current I < 1 100 Adc GSS (V = -0.4 Vdc, V = 0 Vdc) GS DS Off State Drain Current I 1 600 Adc DSO (V = 12 Vdc, V = -2.5 Vdc) DS GS Off State Current I < 1 9 mAdc DSX (V = 28.5 Vdc, V = -2.5 Vdc) DS GS Gate-Source Cut-off Voltage V -1.2 -0.95 -0.7 Vdc GS(th) (V = 3.5 Vdc, I = 8.7 mA) DS DS Quiescent Gate Voltage V -1.1 -0.85 -0.6 Vdc GS(Q) (V = 12 Vdc, I = 105 mA) DS D Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 12 Vdc, I = 80 mA, P = 450 mWatts Avg., f = 3550 MHz, DD DQ out Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. PAR = 8.5 dB 0.01% Probability on CCDF. Power Gain G 10 11 dB ps Drain Efficiency 22 26 % D Adjacent Channel Power Ratio ACPR -44 -39 dBc Typical RF Performance (In Freescale Test Fixture, 50 hm system) V = 12 Vdc, I = 80 mA, f = 3550 MHz DD DQ Output Power, 1 db Compression Point, CW P 4.5 W 1dB MRFG35005ANT1 RF Device Data Freescale Semiconductor 2