CE3514M4 CEL

RF Low Noise FET CE3514M4 12GHz Low Noise FET in Dual Mold Plastic PKG Enter a Short Document/Title Name Here DESCRIPTION PACKAGE Low Noise and High Gain Flat-lead 4-pin thin-type super minimold Original Dual Mold Plastic package package FEATURES Low noise figure and high associated gain NF=0.42dB TYP., Ga=12.2dB TYP. VDS=2V, ID=10mA, f=12GHz APPLICATIONS DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number Package Marking Description CE3514M4 CE3514M4-C2 Flat-lead 4-pin C0F Embossed tape 8 mm wide thin-type super Pin 1(Source), Pin 2 (Drain) minimold Face the perforation side of package the Tape MOQ 15 kpcs/reel This document is subject to change without notice. Date Published: July 2016 CDS-0021-02 (Issue A) 1 CE3514M4 PIN CONFIGURATION : PIN No. PIN Name 1 Source 2 Drain 3 Source 4 Gate ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Parameter Symbol Rating Unit Drain to Source Voltage V 4.0 V DS Gate to Source Voltage V -3.0 V GS Drain Current I I mA D DSS Gate Current I 80 A G Total Power Dissipation P 125 mW tot C Channel Temperature T +150 ch Storage Temperature T -55 to +125 C stg Note C Operation Temperature T -55 to +125 op Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 RECOMMENDED OPERATING RANGE A (T = +25C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current I 5 10 15 mA D This document is subject to change without notice. 2