X-On Electronics has gained recognition as a prominent supplier of STAC150V2-350E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. STAC150V2-350E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

STAC150V2-350E STMicroelectronics

STAC150V2-350E electronic component of STMicroelectronics
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Part No.STAC150V2-350E
Manufacturer: STMicroelectronics
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET RF PWR Transistor 40.68 MHz 700V
Datasheet: STAC150V2-350E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 111.02
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Obsolete
   
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RoHS - XON
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Transistor Polarity
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Voltage
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We are delighted to provide the STAC150V2-350E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STAC150V2-350E and other electronic components in the RF MOSFET Transistors category and beyond.

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STAC150V2-350E RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Datasheet production data Features Operating frequencies up to 40.68 MHz Excellent thermal stability P = 350 W with 17 dB gain OUT 40.68 MHz/150 V Designed for class E operation V > 700 V (BR)DSS STAC air cavity packaging technology - STAC package In compliance with the 2002/95/EC1 European directive STAC177B Description Figure 1. Pin connection The STAC150V2-350E is a high voltage N- channel MOS field-effect RF power transistor 1 (drain) especially designed for 150V Industrial RF power class E generators such as PECVD plasma sputtering, flat panel and solar cells manufacturing equipments. STAC150V2-350E 2 (source) 4 (source) benefits from the latest generation of STAC air cavity package which exhibits a 25% lower thermal resistance compared to equivalent ceramic package. 3 (gate) 5 (source) on backside Table 1. Device summary Order code Marking Base qty. Package Packaging (1) STAC150V2-350E 150V2-350 25 pcs STAC177B Plastic tray 1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.. January 2013 Doc ID 024198 Rev 1 1/12 This is information on a product in full production. www.st.com 12Contents STAC150V2-350E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedance data . 5 4 Typical performance . 6 5 Package mechanical data . 8 6 Marking, packing and shipping specifications . 10 7 Revision history . 11 2/12 Doc ID 024198 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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