STAC2932BW STMicroelectronics

STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 300 W min. with 20 dB gain 175 MHz OUT In compliance with the 2002/95/EC European directive ST air cavity packaging technology - STAC package STAC244B Air cavity Description The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for Figure 1. Pin connection use in 50 V DC large signal applications up to 250 MHz. The STAC2932B benefits from the latest 1 generation of efficient, patent-pending package 1 technology, otherwise known as STAC . 2 3 3 1. Drain 2. Source (bottom side) 3. Gate Table 1. Device summary Order code Marking Base qty. Package Packaging (1) STAC2932BW STAC2932 20 STAC244B Tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. January 2014 DocID15497 Rev 6 1/14 This is information on a product in full production. www.st.comContents STAC2932B Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static 4 2.2 Dynamic . 4 3 Impedance . 5 4 Typical performance . 6 5 Test circuit . 8 6 Package mechanical data 10 7 Marking, packing and shipping specifications . 12 8 Revision history . 13 2/14 DocID15497 Rev 6