Document Number: AFT09H31003S Freescale Semiconductor Rev. 1, 9/2013 Technical Data RF Power LDMOS Transistors AFT09H31003SR6 NChannel EnhancementMode Lateral MOSFETs AFT09H31004GSR6 These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920 to 960 MHz. 920960 MHz, 56 W AVG., 28 V Typical Doherty SingleCarrier WCDMA Performance: V = 28 Volts, DD I = 680 mA, V = 0.4 Vdc, P = 56 Watts Avg., Input Signal AIRFAST RF POWER LDMOS DQA GSB out PAR = 9.9 dB 0.01% Probability on CCDF. TRANSISTORS G Output PAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 920 MHz 17.9 47.4 8.2 28.5 940 MHz 18.0 48.5 8.1 31.2 960 MHz 18.2 47.3 7.9 35.0 NI1230S4S AFT09H31003SR6 Features Advanced High Performance InPackage Doherty Greater Negative GateSource Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13inch Reel. NI1230GS4L AFT09H31004GSR6 Carrier RF /V31 RF /V inA GSA outA DSA RF /V RF /V 42 inB GSB outB DSB Peaking (Top View) Figure 1. Pin Connections Freescale Semiconductor, Inc., 2013. All rights reserved. AFT09H31003SR6 AFT09H31004GSR6 RF Device Data Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings Rating Symbol Value Unit DrainSource Voltage V 0.5, +70 Vdc DSS GateSource Voltage V 6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J CW Operation T = 25C CW 256 W C Derate above 25C 0.9 W/C Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.41 C/W JC Case Temperature 75C, 56 W WCDMA, 28 Vdc, I = 680 mA, V = 0.4 Vdc, 940 MHz DQA GSB Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22A114) 2 Machine Model (per EIA/JESD22A115) B Charge Device Model (per JESD22C101) IV Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 65 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS GateSource Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS (4) On Characteristics Side A (Carrier) Gate Threshold Voltage V 0.9 1.5 1.9 Vdc GS(th) (V = 10 Vdc, I = 242 Adc) DS D Gate Quiescent Voltage V 1.7 2.1 2.5 Vdc GSA(Q) (V = 28 Vdc, I = 680 mAdc, Measured in Functional Test) DD DA DrainSource OnVoltage V 0.05 0.2 0.4 Vdc DS(on) (V = 10 Vdc, I = 1.0 Adc) GS D (4) On Characteristics Side B (Peaking) Gate Threshold Voltage V 0.9 1.5 1.9 Vdc GS(th) (V = 10 Vdc, I = 310 Adc) DS D DrainSource OnVoltage V 0.05 0.2 0.4 Vdc DS(on) (V = 10 Vdc, I = 1.0 Adc) GS D 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at