DocumentNumber:AFT09MS015N FreescaleSemiconductor Rev. 1, 7/2014 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFT09MS015NT1 Enhancement--ModeLateral MOSFET Designedfor mobiletwo--way radioapplications withfrequencies from 136 to 941 MHz. The highgain, ruggedness and widebandperformance of this device make it ideal for large--signal, common--source amplifier applications in mobileradioequipment. 136941MHz,16W,12.5V NarrowbandPerformance (12.5Vdc,I =100mA,T =25 C,CW) DQ A WIDEBAND RFPOWERLDMOSTRANSISTOR Frequency G P ps D out (MHz) (dB) (%) (W) (1) 870 17.2 77.0 16 Wideband Performance (12.5 Vdc, T =25 C, CW) A Frequency P G P in ps D out (MHz) (W) (dB) (%) (W) 136--174 0.38 16.0 60.0 15 350--470 0.23 18.5 60.0 16 PLD--1.5W (2) 760--870 0.32 16.8 52.3 15 LoadMismatch/Ruggedness Frequency Signal P Test in (MHz) Type VSWR (W) Voltage Result (1) 870 CW >65:1atall 0.5 17 NoDevice Gate Drain PhaseAngles (3dB Overdrive) Degradation 1. Measuredin870MHz narrowbandtestcircuit. 2. Measuredin760--870MHz UHFbroadbandreferencecircuit. Note: Thecenterpadonthebacksideof thepackageis thesourceterminal Features forthetransistor. Characterizedfor Operationfrom 136to941MHz UnmatchedInput andOutput AllowingWideFrequency RangeUtilization Figure1.PinConnections IntegratedESD Protection IntegratedStability Enhancements Wideband FullPower Across theBand ExceptionalThermalPerformance ExtremeRuggedness HighLinearity for: TETRA, SSB InTapeandReel. T1Suffix = 1,000Units, 16mm TapeWidth, 7--inchReel. TypicalApplications Output or Driver StageVHF BandMobileRadio Output or Driver StageUHF BandMobileRadio Output or Driver Stagefor 700--800MHz MobileRadio FreescaleSemiconductor, Inc., 2014. All rights reserved. AFT09MS015NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+40 Vdc DSS Gate--SourceVoltage V --6.0,+12 Vdc GS OperatingVoltage V 17,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperature T --40to+150 C J TotalDeviceDissipation T =25 C P 125 W C D Derateabove25 C 1.0 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.0 C/W JC CaseTemperature85C,15W CW,12.5Vdc,I =100mA,870MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) A,passes 150V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =40Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 2 Adc DSS (V =12.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 600 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.8 2.2 2.6 Vdc GS(th) (V =10Vdc,I =78 Adc) DS D Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =0.78Adc) GS D ForwardTransconductance g 4.4 S fs (V =10Vdc,I =5.9Adc) DS D DynamicCharacteristics ReverseTransferCapacitance C 1.04 pF rss (V =12.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 34 pF oss (V =12.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 74 pF iss (V =12.5Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat
