Document Number: AFT23S17013S Freescale Semiconductor Rev. 0, 6/2013 Technical Data RF Power LDMOS Transistor NChannel EnhancementMode Lateral MOSFET AFT23S17013SR3 This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. Typical SingleCarrier WCDMA Performance: V = 28 Volts, DD I = 1100 mA, P = 45 Watts Avg., Input Signal PAR = 9.9 dB 0.01% DQ out Probability on CCDF. 23002400 MHz, 45 W AVG., 28 V G Output PAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2300 MHz 18.3 33.8 6.9 34.4 13 2350 MHz 18.6 33.8 6.9 34.3 16 2400 MHz 18.8 33.9 6.8 33.9 13 Features Greater Negative GateSource Voltage Range for Improved Class C Operation NI780S2L4S Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13inch Reel. (1) N.C.16 VBW 25 RF /V RF /V in GS out DS (1) 34 VBW N.C. (Top View) Figure 1. Pin Connections 1. Device can operate with the V current DD supplied through pin 4 and pin 6 at a reduced RF output power level. Refer to CW operation data in the Maximum Ratings table. Freescale Semiconductor, Inc., 2013. All rights reserved. AFT23S17013SR3 RF Device Data Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings Rating Symbol Value Unit DrainSource Voltage V 0.5, +65 Vdc DSS GateSource Voltage V 6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J CW Operation T = 25C when DC current is fed through pin 4 and pin 6 CW 94 W C Derate above 25C 0.44 W/C Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.42 C/W JC Case Temperature 78C, 45 W CW, 28 Vdc, I = 1100 mA, 2350 MHz DQ Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22A114) 2 Machine Model (per EIA/JESD22A115) B Charge Device Model (per JESD22C101) IV Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 65 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS GateSource Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 0.9 1.3 1.7 Vdc GS(th) (V = 10 Vdc, I = 219 Adc) DS D Gate Quiescent Voltage V 1.4 1.8 2.2 Vdc GS(Q) (V = 28 Vdc, I = 1100 mAdc, Measured in Functional Test) DD D DrainSource OnVoltage V 0.1 0.2 0.3 Vdc DS(on) (V = 6 Vdc, I = 2.19 Adc) GS D (4) Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1100 mA, P = 45 W Avg., f = 2400 MHz, DD DQ out SingleCarrier WCDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. Power Gain G 17.5 18.8 20.0 dB ps Drain Efficiency 32.0 33.9 % D Output PeaktoAverage Ratio 0.01% Probability on CCDF PAR 6.3 6.8 dB Adjacent Channel Power Ratio ACPR 33.9 32.0 dBc Input Return Loss IRL 13 9 dB 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at