DocumentNumber:AFT27S006N NXPSemiconductors Rev. 5, 12/2017 Technical Data RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET AFT27S006NT1 This 28.8dBmRF powerLDMOStransistoris designedfor cellularbase station applications covering the frequency range of 728 to 3700 MHz. Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD I =65mA,P = 28.8 dBm Avg., Input Signal PAR = 9.9 dB 0.01% DQ out 728--3700MHz,28.8dBmAVG.,28V (1) Probability onCCDF. AIRFASTRFPOWERLDMOS 700MHz TRANSISTOR G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 728 MHz 24.3 20.2 9.9 --45.6 --19 748 MHz 24.4 19.9 9.9 --45.9 --17 768 MHz 24.2 19.4 9.8 --46.2 --13 Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD PLD--1.5W I =70mA,P = 28.8 dBm Avg., Input Signal PAR = 9.9 dB 0.01% DQ out PLASTIC (1) Probability onCCDF. 2100MHz G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110 MHz 22.2 18.3 9.2 --42.3 --14 RF /V in GS RF /V out DS 2140 MHz 22.8 19.8 9.5 --44.6 --17 2170 MHz 22.5 20.2 9.3 --46.0 --13 2300MHz (Top View) G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) Note: Thecenterpadonthebacksideofthe 2300 MHz 22.9 20.9 9.8 --41.0 --10 packageisthesourceterminalforthe transistor. 2350 MHz 23.5 21.5 9.4 --40.8 --24 2400 MHz 23.0 22.4 8.9 --41.0 --11 Figure1.PinConnections 2600MHz G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2500 MHz 20.4 19.4 9.5 --44.0 --7 2600 MHz 22.0 21.2 9.1 --42.5 --16 2700 MHz 20.9 20.3 8.5 --40.9 --7 3500MHz G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 3400 MHz 16.1 14.3 9.0 --44.1 --9 3500 MHz 17.9 16.4 9.1 --46.2 --13 3600 MHz 16.0 16.7 8.7 --44.4 --4 1. Alldata measured in fixture with device soldered to heatsink. Features Greater negative gate--source voltage range for improved Class C operation Designedfor digital predistortion error correctionsystems Universal broadband driver 20132015, 2017NXP B.V. AFT27S006NT1 RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +150 C C (1,2) Operating Junction Temperature Range T --40 to +150 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 3.4 C/W JC Case Temperature 78C, 0.76 W CW, 28 Vdc, I =70 mA, 2140 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =7.7 Adc) DS D Gate Quiescent Voltage V 1.5 1.8 2.3 Vdc GS(Q) (V =28Vdc,I =70 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =6Vdc,I =77mAdc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at