STAC2932FW STMicroelectronics

STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 300 W min. with 20 dB gain 175 MHz OUT In compliance with the 2002/95/EC European directive ST air cavity packaging technology - STAC package STAC244F Air cavity Description The STAC2932F is a gold metallized N-channel Figure 1. Pin connection MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 1 MHz. 1 The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC . 2 2 3 3. Source 1. Drain (Bottom side) 2. Gate Table 1. Device summary Order code Marking Base qty. Package Packaging (1) STAC2932FW STAC2932F 20 STAC244F Tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. January 2012 Doc ID 17120 Rev 3 1/14 www.st.com 14 Contents STAC2932F Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedance . 5 4 Typical performance . 6 5 Test circuit . 8 6 Package mechanical data 10 7 Marking, packing and shipping specifications . 12 8 Revision history . 13 2/14 Doc ID 17120 Rev 3