DocumentNumber:MRFE6VP5600H FreescaleSemiconductor Rev. 1, 1/2011 TechnicalData RFPowerFieldEffectTransistors HighRuggedness N--Channel MRFE6VP5600HR6 Enhancement--ModeLateral MOSFETs MRFE6VP5600HSR6 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace andradio/landmobileapplications.Theyareunmatchedinputandoutput designs allowingwidefrequency rangeutilization,between1.8and600MHz. 1.8--600MHz,600WCW,50V Typical Performance: V =50Volts,I = 100mA DD DQ LATERALN--CHANNEL BROADBAND P f G IRL out ps D RFPOWERMOSFETs SignalType (W) (MHz) (dB) (%) (dB) Pulsed(100sec, 600Peak 230 25.0 74.6 --18 20%Duty Cycle) CW 600Avg. 230 24.6 75.2 --17 Capableof HandlingaLoadMismatchof 65:1VSWR, 50Vdc, 230MHz, at all PhaseAngles, Designedfor EnhancedRuggedness 600Watts PulsedPeak Power, 20%Duty Cycle, 100sec CASE375D--05,STYLE1 Features NI--1230 UnmatchedInput andOutput AllowingWideFrequency RangeUtilization MRFE6VP5600HR6 DevicecanbeusedSingle--Endedor inaPush--Pull Configuration QualifiedUptoaMaximum of 50V Operation DD Characterizedfrom 30V to50V for ExtendedPower Range Suitablefor Linear ApplicationwithAppropriateBiasing IntegratedESD ProtectionwithGreater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation CASE375E--04,STYLE1 CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters NI--1230S RoHSCompliant MRFE6VP5600HSR6 InTapeandReel. R6Suffix = 150Units, 56mm TapeWidth, 13inchReel. For R5 Tape and Reel options, seep. 12. PARTSAREPUSH--PULL Table1.MaximumRatings Rating Symbol Value Unit RF /V31 RF /V in GS out DS Drain--Source Voltage V --0.5,+130 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg RF /V RF /V42 out DS in GS CaseOperatingTemperature T 150 C C TotalDeviceDissipation T =25C P 1667 W C D (Top View) Derateabove25C 8.33 W/C (1,2) Figure1.PinConnections OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase C/W CaseTemperature68C, 600W Pulsed, 100sec PulseWidth,20%Duty Cycle,100mA,230MHz Z 0.022 JC CaseTemperature60C,600W CW,100mA,230MHz R 0.12 JC 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 130 Vdc (BR)DSS (V =0Vdc,I =100mA) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (1) GateThresholdVoltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =960Adc) DS D GateQuiescentVoltage V 2.0 2.5 3.0 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D (1) Drain--SourceOn--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 1.60 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 129 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 342 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =100mA,P =600W Peak (120W Avg.),f=230MHz, DD DQ out Pulsed,100sec PulseWidth,20%Duty Cycle PowerGain G 23.5 25.0 26.5 dB ps Drain Efficiency 73.5 74.6 % D Input ReturnLoss IRL --18 --12 dB 1. Eachsideofdevicemeasuredseparately. MRFE6VP5600HR6MRFE6VP5600HSR6 RF DeviceData FreescaleSemiconductor 2