BF1206,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 drain (b) Superior cross-modulation performance during AGC 2 source High forward transfer admittance 3gate1(b) High forward transfer admittance to input capacitance 4gate1(a) ratio. 5gate2 6 drain (a) APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and d (a) g2 g1 (a) handbook, halfpage analog television tuners. 654 DESCRIPTION AMP a The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. AMP b The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good 12 3 cross-modulation performance during AGC. Integrated Top view d (b) s g1 (b) diodes between the gates and source protect against MAM480 excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package. Marking code: L6-. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET; unless otherwise specified V drain-source voltage 6V DS drain current (DC) 30 mA I D y forward transfer admittance amp. a: I=18mA 333848 mS fs D amp. b: I=12mA 293444 mS D C input capacitance at gate 1 amp. a: I =18mA; f= 1MHz 2.4 2.9 pF ig1-s D amp. b: I =12mA; f= 1MHz 1.7 2.2 pF D C reverse transfer capacitance f = 1 MHz 15 fF rss X cross-modulation amp. a: input level for k = 1% at 102 105 dB V mod 40 dB AGC amp. b: input level for k = 1% at 100 103 dB V 40 dB AGC NF noise figure amp. a: f = 400 MHz; I =18mA 1.3 1.9 dB D amp. b: f = 800 MHz; I =12mA 1.4 2.0 dB D amp. a: f = 11 MHz; I =18mA 3 dB D amp. b: f = 11 MHz; I =12mA 3.5 dB D 2003 Nov 17 2