BF1208D,115 NXP

BF1208D Dual N-channel dual gate MOSFET Rev. 01 16 May 2007 Product data sheet 1. Product prole 1.1 General description The BF1208D is a combination of two dual gate MOSFET ampliers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Two low noise gain controlled ampliers in a single package. One with a fully integrated bias and one with a partly integrated bias n Internal switch to save external components n Superior cross modulation performance during AGC n High forward transfer admittance n High forward transfer admittance to input capacitance ratio 1.3 Applications n Gain controlled low noise ampliers for VHF and UHF applications with 5 V supply voltage u digital and analog television tuners u professional communication equipmentBF1208D NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specied. Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage DC - - 6 V DS I drain current DC - - 30 mA D [1] P total power dissipation T 109 C - - 180 mW tot sp |y | forward transfer admittance f = 100 MHz; T = 25 C fs j amplier A; I =19mA 26 31 41 mS D amplier B; I =15mA 25 30 40 mS D C input capacitance at gate1 f = 100 MHz iss(G1) [2] amplier A - 2.1 2.6 pF [2] amplier B - 2.1 2.6 pF [2] C reverse transfer capacitance f = 100 MHz -30 - fF rss NF noise gure Y =Y S S(opt) amplier A; f = 400 MHz - 0.9 1.5 dB amplier B; f = 800 MHz - 1.4 2.0 dB Xmod cross modulation input level for k = 1 %; f = 50 MHz; w f = 60 MHz unw at 40 dB AGC [3] amplier A 102 105 - dBV [4] amplier B 102 105 - dBV T junction temperature - - 150 C j [1] T is the temperature at the soldering point of the source lead. sp [2] Calculated from S-parameters. [3] Measured in Figure 33 test circuit. [4] Measured in Figure 34 test circuit. 2. Pinning information Table 2. Discrete pinning Pin Description Simplied outline Symbol 1 gate1 (AMP A) 6 5 4 2 gate2 AMP A 3 gate1 (AMP B) G1A DA 4 drain (AMP B) 5 source G2 S 12 3 6 drain (AMP A) G1B DB AMP B sym089 BF1208D_1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 16 May 2007 2 of 22