X-On Electronics has gained recognition as a prominent supplier of BF1208D,115 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF1208D,115 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF1208D,115 NXP

BF1208D,115 electronic component of NXP
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Part No.BF1208D,115
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 6V 0.03A 6-Pin SOT-666 T/R
Datasheet: BF1208D,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
42: USD 0.8598 ea
Line Total: USD 36.11 
Availability - 0
MOQ: 42  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
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Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Rad Hardened
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Output Capacitance Typ Vds
Reverse Capacitance Typ
Noise Figure Max
Drain Source Voltage Max
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We are delighted to provide the BF1208D,115 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF1208D,115 and other electronic components in the RF MOSFET Transistors category and beyond.

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BF1208D Dual N-channel dual gate MOSFET Rev. 01 16 May 2007 Product data sheet 1. Product prole 1.1 General description The BF1208D is a combination of two dual gate MOSFET ampliers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Two low noise gain controlled ampliers in a single package. One with a fully integrated bias and one with a partly integrated bias n Internal switch to save external components n Superior cross modulation performance during AGC n High forward transfer admittance n High forward transfer admittance to input capacitance ratio 1.3 Applications n Gain controlled low noise ampliers for VHF and UHF applications with 5 V supply voltage u digital and analog television tuners u professional communication equipmentBF1208D NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specied. Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage DC - - 6 V DS I drain current DC - - 30 mA D [1] P total power dissipation T 109 C - - 180 mW tot sp |y | forward transfer admittance f = 100 MHz; T = 25 C fs j amplier A; I =19mA 26 31 41 mS D amplier B; I =15mA 25 30 40 mS D C input capacitance at gate1 f = 100 MHz iss(G1) [2] amplier A - 2.1 2.6 pF [2] amplier B - 2.1 2.6 pF [2] C reverse transfer capacitance f = 100 MHz -30 - fF rss NF noise gure Y =Y S S(opt) amplier A; f = 400 MHz - 0.9 1.5 dB amplier B; f = 800 MHz - 1.4 2.0 dB Xmod cross modulation input level for k = 1 %; f = 50 MHz; w f = 60 MHz unw at 40 dB AGC [3] amplier A 102 105 - dBV [4] amplier B 102 105 - dBV T junction temperature - - 150 C j [1] T is the temperature at the soldering point of the source lead. sp [2] Calculated from S-parameters. [3] Measured in Figure 33 test circuit. [4] Measured in Figure 34 test circuit. 2. Pinning information Table 2. Discrete pinning Pin Description Simplied outline Symbol 1 gate1 (AMP A) 6 5 4 2 gate2 AMP A 3 gate1 (AMP B) G1A DA 4 drain (AMP B) 5 source G2 S 12 3 6 drain (AMP A) G1B DB AMP B sym089 BF1208D_1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 16 May 2007 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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