BF1210,115 NXP

BF1210 Dual N-channel dual gate MOSFET Rev. 01 25 October 2006 Product data sheet 1. Product prole 1.1 General description The BF1210 is a combination of two dual gate MOSFET ampliers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Two low noise gain controlled ampliers in a single package both with a partly integrated bias n Superior cross modulation performance during AGC n High forward transfer admittance n High forward transfer admittance to input capacitance ratio 1.3 Applications n Gain controlled low noise ampliers for VHF and UHF applications with 5 V supply voltage u digital and analog television tuners u professional communication equipmentBF1210 NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specied. Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 6 V DS I drain current DC - - 30 mA D 1 P total power dissipation T 107 C - - 180 mW tot sp y forward transfer admittance amplier A I =19mA 26 31 41 mS fs D amplier B I =13mA 28 33 43 mS D 2 C input capacitance at gate1 f = 100 MHz iss(G1) amplier A - 2.2 2.7 pF amplier B - 1.9 2.4 pF 2 C reverse transfer capacitance f = 100 MHz -20 - fF rss NF noise gure amplier A f = 400 MHz - 0.9 1.5 dB amplier B f = 800 MHz - 1.2 1.9 dB Xmod cross modulation input level for k = 1 % at 40 dB AGC amplier A 100 105 - dBV amplier B 100 103 - dBV T junction temperature - - 150 C j 1 T is the temperature at the soldering point of the source lead. sp 2 Calculated from S-parameters. 2. Pinning information Table 2. Discrete pinning Pin Description Simplied outline Symbol 1 gate1 (AMP A) 6 5 4 AMP A 2 gate2 G1A DA 3 gate1 (AMP B) 4 drain (AMP B) G2 S 132 5 source G1B DB 6 drain (AMP A) AMP B sym119 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1210 - plastic surface-mounted package 6 leads SOT363 BF1210 1 NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 25 October 2006 2 of 21