X-On Electronics has gained recognition as a prominent supplier of BF 2030 E6814 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF 2030 E6814 RF MOSFET Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF 2030 E6814 Infineon

BF 2030 E6814 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.BF 2030 E6814
Manufacturer: Infineon
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET Silicon N Channel MOSFET Tetrode
Datasheet: BF 2030 E6814 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1250: USD 0.1 ea
Line Total: USD 125 
Availability - 11640
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ: 1250  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 1250
Multiples : 1
1250 : USD 0.1

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF 2030 E6814 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF 2030 E6814 and other electronic components in the RF MOSFET Transistors category and beyond.

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BF2030... Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Drain RF Output G2 + DC AGC G1 RF Input RG1 GND VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration Marking BF2030 SOT143 1= S 2=D 3=G2 4=G1 - - NDs BF2030R SOT143R 1= D 2=S 3=G1 4=G2 - - NDs BF2030W SOT343 1= D 2=S 3=G1 4=G2 - - NDs Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 40 mA Continuous drain current I D Gate 1/ gate 2-source current I 10 G1/2SM 6 V Gate 1 (external biasing) +V G1SE mW Total power dissipation P tot T 76 C, BF2030, BF2030R 200 S T 94 C, BF2030W 200 S C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch 1 Pb-containing package may be available upon special request 1 2007-04-20BF2030... Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R thchs BF2030/ BF2030R 370 BF2030W 280 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 10 - - V Drain-source breakdown voltage V (BR)DS I = 20 A, V = 0 , V = 0 D G1S G2S 6 - 15 Gate1-source breakdown voltage +V (BR)G1SS +I = 10 mA, V = 0 , V = 0 G1S G2S DS 6 - 15 Gate2-source breakdown voltage +V (BR)G2SS +I = 10 mA, V = 0 , V = 0 G2S G1S DS - - 50 nA Gate1-source leakage current +I G1SS V = 5 V, V = 0 , V = 0 G1S G2S DS - - 50 Gate2-source leakage current +I G2SS V = 5 V, V = 0 , V = 0 G2S G1S DS - - 50 A Drain current I DSS V = 5 V, V = 0 , V = 4 V DS G1S G2S - 12 - mA Drain-source current I DSX V = 5 V, V = 4 V, R = 100 k DS G2S G1 Gate1-source pinch-off voltage V 0.3 0.5 - V G1S(p) V = 5 V, V = 4 V, I = 20 A DS G2S D Gate2-source pinch-off voltage V 0.3 0.6 - G2S(p) V = 5 V, I = 20 A DS D 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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