BF2030... Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Drain RF Output G2 + DC AGC G1 RF Input RG1 GND VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration Marking BF2030 SOT143 1= S 2=D 3=G2 4=G1 - - NDs BF2030R SOT143R 1= D 2=S 3=G1 4=G2 - - NDs BF2030W SOT343 1= D 2=S 3=G1 4=G2 - - NDs Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 40 mA Continuous drain current I D Gate 1/ gate 2-source current I 10 G1/2SM 6 V Gate 1 (external biasing) +V G1SE mW Total power dissipation P tot T 76 C, BF2030, BF2030R 200 S T 94 C, BF2030W 200 S C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch 1 Pb-containing package may be available upon special request 1 2007-04-20BF2030... Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R thchs BF2030/ BF2030R 370 BF2030W 280 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 10 - - V Drain-source breakdown voltage V (BR)DS I = 20 A, V = 0 , V = 0 D G1S G2S 6 - 15 Gate1-source breakdown voltage +V (BR)G1SS +I = 10 mA, V = 0 , V = 0 G1S G2S DS 6 - 15 Gate2-source breakdown voltage +V (BR)G2SS +I = 10 mA, V = 0 , V = 0 G2S G1S DS - - 50 nA Gate1-source leakage current +I G1SS V = 5 V, V = 0 , V = 0 G1S G2S DS - - 50 Gate2-source leakage current +I G2SS V = 5 V, V = 0 , V = 0 G2S G1S DS - - 50 A Drain current I DSS V = 5 V, V = 0 , V = 4 V DS G1S G2S - 12 - mA Drain-source current I DSX V = 5 V, V = 4 V, R = 100 k DS G2S G1 Gate1-source pinch-off voltage V 0.3 0.5 - V G1S(p) V = 5 V, V = 4 V, I = 20 A DS G2S D Gate2-source pinch-off voltage V 0.3 0.6 - G2S(p) V = 5 V, I = 20 A DS D 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20