Product Information

BF909WR,115

BF909WR,115 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) CMPAK T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

69: USD 0.4085 ea
Line Total: USD 28.19

0 - Global Stock
MOQ: 69  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
Packaging
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Channel Mode
Rad Hardened
Application
Frequency Max
Output Capacitance Typ Vds
Reverse Capacitance Typ
Noise Figure Max
Drain Source Voltage Max
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification 2010 Sep 15 Supersedes data of 1997 Sep 05NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3g gate 2 2 Superior cross-modulation performance during AGC. 4g gate 1 1 APPLICATIONS d VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage such as television tuners and professional 34 communications equipment. DESCRIPTION g 2 g Enhancement type field-effect transistor in a plastic 1 microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and 21 substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. s,b Top view MAM192 Marking code: ME* * = - : made in Hong Kong CAUTION * = p : made in Hong Kong * = t : made in Malaysia The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 7V DS I drain current 40 mA D P total power dissipation 280 mW tot T operating junction temperature 150 C j y forward transfer admittance 36 43 50 mS fs C input capacitance at gate 1 3.6 4.3 pF ig1-s C reverse transfer capacitance f = 1 MHz 30 50 fF rs F noise figure f = 800 MHz 22.8 dB 2010 Sep 15 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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