BF909WR,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification 2010 Sep 15 Supersedes data of 1997 Sep 05NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3g gate 2 2 Superior cross-modulation performance during AGC. 4g gate 1 1 APPLICATIONS d VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage such as television tuners and professional 34 communications equipment. DESCRIPTION g 2 g Enhancement type field-effect transistor in a plastic 1 microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and 21 substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. s,b Top view MAM192 Marking code: ME* * = - : made in Hong Kong CAUTION * = p : made in Hong Kong * = t : made in Malaysia The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 7V DS I drain current 40 mA D P total power dissipation 280 mW tot T operating junction temperature 150 C j y forward transfer admittance 36 43 50 mS fs C input capacitance at gate 1 3.6 4.3 pF ig1-s C reverse transfer capacitance f = 1 MHz 30 50 fF rs F noise figure f = 800 MHz 22.8 dB 2010 Sep 15 2