DocumentNumber:MMRF1320N FreescaleSemiconductor Rev. 0, 7/2015 Technical Data RFPowerLDMOSTransistors MMRF1320N HighRuggedness N--Channel MMRF1320GN Enhancement--ModeLateral MOSFETs ThesehighruggednessdevicesaredesignedforuseinhighVSWRdefense andcommercialradiocommunicationsandHF,VHFandUHFradar 1.8600MHz,150WCW,50V applications.Theunmatchedinput andoutput designsallow widefrequency WIDEBAND rangeutilization, from 1.8to600MHz. RFPOWERLDMOSTRANSISTORS TypicalPerformance: V =50Vdc DD P Frequency G out ps D SignalType (W) (MHz) (dB) (%) TO--270WB--4 230 CW 150 26.3 72.0 PLASTIC 230 Pulse 150 Peak 26.1 70.3 MMRF1320N (100 sec,20% Duty Cycle) LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result TO--270WBG--4 PLASTIC 230 Pulse >65:1 0.62 Peak 50 NoDevice MMRF1320GN (100 sec,20% at all (3 dB Degradation Duty Cycle) Phase Overdrive) Angles Features Wide operating frequency range DrainA GateA32 Extremeruggedness Unmatched input and output allowing wide frequency range utilization Integrated stability enhancements GateB41 DrainB Low thermal resistance IntegratedESD protectioncircuitry (Top View) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.PinConnections FreescaleSemiconductor, Inc., 2015. All rights reserved. MMRF1320NMMRF1320GN RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +133 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 952 W C D Derate above 25 C 4.76 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.21 C/W JC CW: Case Temperature 80 C, 150W CW, 50Vdc, I =100 mA, 230 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.04 C/W JC Pulse: Case Temperature 66C, 150 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) B,passes 250V Charge Device Model(perJESD22--C101) IV, passes 1200V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 139 Vdc (BR)DSS (V =0Vdc,I =50mAdc) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.8 2.4 2.8 Vdc GS(th) (V =10Vdc,I =480 Adc) DS D Gate Quiescent Voltage V 2.3 2.8 3.3 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D (4) Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =1Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at