BF245C,112 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF245A BF245B BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995NXP Semiconductors Product specification BF245A BF245B N-channel silicon field-effect transistors BF245C FEATURES PINNING Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION Frequencies up to 700 MHz. 1 d drain 2 s source APPLICATIONS 3g gate LF, HF and DC amplifiers. DESCRIPTION 1 handbook, halfpage 2 General purpose N-channel symmetrical junction 3 d field-effect transistors in a plastic TO-92 variant package. g s MAM257 CAUTION The device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 30 V DS V gate-source cut-off voltage I =10nA V =15V 0.258V GSoff D DS V gate-source voltage open drain 30 V GSO I drain current V =15V V =0 DSS DS GS BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA P total power dissipation T =75 C 300 mW tot amb y forward transfer admittance V =15V V =0 3 6.5 mS fs DS GS f= 1kHz T =25 C amb C reverse transfer capacitance V =20V V = 1V 1.1 pF rs DS GS f= 1MHz T =25 C amb 1996 Jul 30 2