Product Information

BF545A,215

BF545A,215 electronic component of NXP

Datasheet
Transistors RF JFET JFET N-CH 30V 10mA

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.402
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.0081
10 : USD 0.8866
25 : USD 0.8008
100 : USD 0.7007
250 : USD 0.6149
500 : USD 0.5427
1000 : USD 0.442
3000 : USD 0.4095
6000 : USD 0.39
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Continuous Drain Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BF545A BF545B BF545C N-channel silicon junction field-effect transistors Rev. 4 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). 1.3 Applications Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 30 V DS V gate-source cut-off I =1 A V =15V 0.4 - 7.8 V GSoff D DS voltage I drain current V =0V V =15V DSS GS DS BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA P total power dissipation T 25 C--250mW tot amb y forward transfer V =0V V =15V 3 - 6.5 mS fs GS DS admittance SOT23BF545A BF545B BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 source (s) 3 d 2drain (d) g s 3gate (g) sym054 12 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF545A - plastic surface mounted package 3 leads SOT23 BF545B BF545C 4. Marking Table 4. Marking 1 Type number Marking code BF545A 20* BF545B 21* BF545C 22* 1 * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BF545A BF545B BF545C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 15 September 2011 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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