HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. f = 2 GHz, VDS = 2 V, ID = 10 mA Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS Satellite radio (SDARS, DMB, etc.) antenna LNA Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3508M04 NE3508M04-A Flat-lead 4-pin thin- 50 pcs (Non reel) V79 8 mm wide embossed taping type super minimold Pin 1 (Source), Pin 2 (Drain) face NE3508M04-T2 NE3508M04-T2-A 3 kpcs/reel (M04) (Pb-Free) the perforation side of the tape <R> NE3508M04-T2B NE3508M04-T2B-A 15 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3508M04-A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID IDSS mA Gate Current IG 400 A Note Total Power Dissipation Ptot 175 mW Channel Temperature Tch +150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10586EJ02V0DS (2nd edition) Date Published October 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. DISCONTINUEDNE3508M04 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 2 3 V Drain Current ID 10 30 mA Input Power Pin 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 1 20 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 60 90 120 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.25 0.5 0.75 V Transconductance gm VDS = 2 V, ID = 10 mA 100 mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 2 GHz 0.45 0.7 dB Associated Gain Ga 12 14 dB Gain 1 dB Compression PO (1 dB) VDS = 3 V, ID = 30 mA (Non-RF), 18 dBm Output Power f = 2 GHz 2 Data Sheet PG10586EJ02V0DS DISCONTINUED