BF861C,215 NXP

BF861A BF861B BF861C N-channel junction FETs Rev. 5 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MSC895 1.2 Features and benefits High transfer admittance Low input capacitance Low feedback capacitance Low noise. 1.3 Applications Preamplifiers for AM tuners in car radios. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage -- 25 V DS (DC) I drain current DSS BF861A V =0V V =8V 2 - 6.5 mA GS DS BF861B V =0V V =8V 6 - 15 mA GS DS BF861C V =0V V =8V 12 - 25 mA GS DS P total power dissipation up to T =25 C- - 250 mW tot amb y forward transfer fs admittance BF861A V =0V V =8V 12 - 20 mS GS DS BF861B V =0V V =8V 16 - 25 mS GS DS BF861C V =0V V =8V 20 - 30 mS GS DS C input capacitance f = 1 MHz - - 10 pF iss C reverse transfer f=1MHz - - 2.7 pF rss capacitance SOT23BF861A BF861B BF861C NXP Semiconductors N-channel junction FETs 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1source 1 3 2drain 3 2 sym053 3gate 12 3. Ordering information Table 3. Ordering information Type Package number Name Description Version BF861A - plastic surface mounted package 3 leads SOT23 BF861B - plastic surface mounted package 3 leads SOT23 BF861C - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code BF861A 28* BF861B 29* BF861C 30* 1 * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 25 V DS V gate-source voltage open drain - 25 V GSO V drain-gate voltage (DC) open source - 25 V DGO I forward gate current (DC) - 10 mA G 1 P total power dissipation up to T =25 C -250 mW tot amb T storage temperature 65 +150 C stg T operating junction -150 C j temperature 1 Device mounted on an FR4 printed-circuit board. BF861A BF861B BF861C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 15 September 2011 2 of 14