Product Information

BF862,235

BF862,235 electronic component of NXP

Datasheet
NXP Semiconductors RF JFET Transistors N-Channel Single - 20V 25mA

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.5897
10 : USD 0.4837
100 : USD 0.3119
1000 : USD 0.2502
2500 : USD 0.2242
10000 : USD 0.2242
20000 : USD 0.2158
50000 : USD 0.2126
100000 : USD 0.2073
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Brand
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification 2000 Jan 05 Supersedes data of 1999 Jun 29NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 High transition frequency for excellent sensitivity in PIN DESCRIPTION AM car radios 1source High transfer admittance. 2drain 3gate APPLICATIONS Pre-amplifiers in AM car radios. handbook, halfpage 21 DESCRIPTION d Silicon N-channel symmetrical junction field-effect g s transistor in a SOT23 package. Drain and source are interchangeable. 3 Top view MAM036 Marking code: 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 20 V DS V gate-source cut-off voltage 0.3 0.8 1.2 V GSoff I drain-source current 10 25 mA DSS P total power dissipation T 90 C 300 mW tot s y transfer admittance 35 45 mS fs T junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Jan 05 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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