MAGX-000912-125L00 MACOM

MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor Production V1 125W Peak, 960-1215 MHz, 128s Pulse, 10% Duty 18 Aug 11 Features GaN depletion mode HEMT microwave transistor Internally matched Common source configuration Broadband Class AB operation RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200C) Applications Avionics: Mode-S, TCAS, JTIDS, DME and TACAN. Product Description The MAGX-000912-125L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN . Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for todays demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical RF Performance at Pout = 125W Peak Freq Pin Gain Slope Id Eff Avg-Eff RL Droop (MHz) (W) (dB) (dB) (A) (%) (%) (dB) (dB) 960 1.4 19.7 - 3.9 64.4 - -6.1 0.3 1030 1.3 19.8 - 4.0 61.6 - -11.9 0.3 1090 1.6 18.9 - 4.1 60.4 - -9.6 0.3 1150 1.7 18.6 - 4.1 61.4 - -9.3 0.3 1215 1.6 18.9 1.2 4.0 61.9 61.9 -12.0 0.3 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=100mA (pulsed), F=960-1215 MHz, Pulse=128us, Duty=10%. Ordering Information MAGX-000912-125L00 125W GaN Power Transistor MAGX-000912-SB0PPR Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology North America Tel: 800.366.2266 / Fax: 978.366.2266 Solutions is considering for development. Performance is based on target specifications, simu- Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 lated results, and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- product(s) or information contained herein without notice. able. Commitment to produce in volume is not guaranteed. MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor Production V1 125W Peak, 960-1215 MHz, 128s Pulse, 10% Duty 18 Aug 11 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (V ) +65V DD Supply Voltage (V ) -8 to -2V GS Supply Current (I ) 7.1 Apk D MAX Input Power (P ) +37dBm IN Absolute Max. Junction/Channel Temp 200C MTTF (T <200C) 114 years J Pulsed Power Dissipation at 85C 230 Wpk Thermal Resistance, (Tj = 70C) V = 50V, I = 100mA, Pout = 125W 0.5C/W DD DQ 128us Pulse / 10% Duty Operating Temp -40 to +95C Storage Temp -65 to +150C Mounting Temperature See solder reflow profile ESD Min. - Machine Model (MM) 50V ESD Min. - Human Body Model (HBM) >250V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS V = -8V, V = 175V I - 0.2 6 mA Drain-Source Leakage Current GS DS DS Gate Threshold Voltage V = 5V, I = 15.0mA V -5 -3.8 -2 V DS D GS (th) Forward Transconductance V = 5V, I = 3.5mA G 2.5 3.6 - S DS D M DYNAMIC CHARACTERISTICS Input Capacitance Not applicableInput internally matched C N/A N/A N/A pF ISS Output Capacitance V = 50V, V = -8V, F = 1MHz C - 11 - pF DS GS OSS Feedback Capacitance V = 50V, V = -8V, F = 1MHz DS GS C - 1.1 - pF RSS 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology North America Tel: 800.366.2266 / Fax: 978.366.2266 Solutions is considering for development. Performance is based on target specifications, simu- Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 lated results, and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- product(s) or information contained herein without notice. able. Commitment to produce in volume is not guaranteed.