X-On Electronics has gained recognition as a prominent supplier of BFT46,215 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. BFT46,215 RF JFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

BFT46,215 NXP

BFT46,215 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.BFT46,215
Manufacturer: NXP
Category: RF JFET Transistors
Description: Transistors RF JFET TAPE7 FET-RFSS
Datasheet: BFT46,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1712
6000 : USD 0.1688
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.607
10 : USD 0.5026
100 : USD 0.3067
1000 : USD 0.2367
3000 : USD 0.2226
9000 : USD 0.2226
24000 : USD 0.2189
45000 : USD 0.2139
99000 : USD 0.2064
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Continuous Drain Current
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFT46,215 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFT46,215 and other electronic components in the RF JFET Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 handbook, halfpage amplifiers in thick and thin-film circuits. d g s PINNING 12 1 = drain Top view MAM385 2 = source 3= gate Note : Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code BFT46 = M3p QUICK REFERENCE DATA Drain-source voltage V max. 25 V DS Gate-source voltage (open drain) V max. 25 V GSO Total power dissipation up to T =40 CP max. 250 mW amb tot Drain current V =10V V =0 0,2 mA DS GS I DSS 1,5 mA Transfer admittance (common source) I = 0,2 mA V = 10 V f = 1 kHz y 0,5 mS D DS fs Equivalent noise voltage V =10 V I =200 A B = 0,6 to 100 Hz V 0,5 V DS D n December 1997 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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