BF512,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF512 = S8p envelope intended for applications up BF513 = S9p to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios 3 handbook, halfpage (BF511) and mains radios (BF512) or the mixer stage (BF513). d g s PINNING - SOT23 12 1= gate Top view MAM385 2 = drain 3 = source Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage V max. 20 V DS Drain current (DC or average) I max. 30 mA D Total power dissipation up to T =40 CP max. 250 mW amb tot BF510 511 512 513 Drain current 0.7 2.5 6 10 mA V =10 V V = 0 I 3.0 7.0 12 18 mA DS GS DSS Transfer admittance (common source) V =10 V V =0 f = 1 kHz y 2.5 467mS DS GS fs Feedback capacitance V = 10 V V =0 C typ. 0.3 0.3 pF DS GS rs V = 10 V I =5 mA C typ. 0.3 0.3 pF DS D rs Noise figure at optimum source admittance G =1 mS B = 3 mS f = 100 MHz S S V =10 V V =0 F typ. 1.5 1.5 dB DS GS =10 V I =5 mA F typ. 1.5 1.5 dB V DS D December 1997 2