BF1211R,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF1211 BF1211R BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16NXP Semiconductors Product specification BF1211 BF1211R N-channel dual-gate MOS-FETs BF1211WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source Low noise gain controlled amplifier 2drain Excellent low frequency noise performance 3gate2 Partly internal self-biasing circuit to ensure good 4gate1 cross-modulation performance during AGC and good DC stabilization. handbook, 2 columns 4 3 APPLICATIONS Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. 12 Top view MSB014 DESCRIPTION BF1211 marking code: LFp Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes Fig.1 Simplified outline (SOT143B). between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. handbook, 2 columns 3 4 3 4 handbook, halfpage 2 1 21 Top view MSB035 Top view MSB842 BF1211R marking code: LHp BF1211WR marking code: MK Fig.2 Simplified outline (SOT143R). Fig.3 Simplified outline (SOT343R). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 6V DS I drain current 30 mA D P total power dissipation 180 mW tot y forward transfer admittance 25 30 40 mS fs C input capacitance at gate 1 2.1 2.6 pF ig1-ss C reverse transfer capacitance f = 1 MHz 15 30 fF rss F noise figure f = 400 MHz 0.9 1.6 dB X cross-modulation input level for k = 1% at 100 105 dBV mod 40 dB AGC T junction temperature 150 C j 2003 Dec 16 2