Document Number: MRFE6S9045N Freescale Semiconductor Rev. 0, 10/2007 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with fre- quencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. Typical Single-Carrier N-CDMA Performance 880 MHz, V = 28 Volts, DD 880 MHz, 10 W AVG., 28 V I = 350 mA, P = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, DQ out Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = SINGLE N-CDMA 9.8 dB 0.01% Probability on CCDF. LATERAL N-CHANNEL Power Gain 22.1 dB BROADBAND Drain Efficiency 32% RF POWER MOSFET ACPR 750 kHz Offset -46 dBc in 30 kHz Channel Bandwidth Capable of Handling 5:1 VSWR, 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application Typical GSM EDGE Performance: V = 28 Volts, I = 350 mA, DD DQ P = 16 Watts Avg., Full Frequency Band (920-960 MHz) out Power Gain 20 dB CASE 1265-09, STYLE 1 Drain Efficiency 46% TO-270-2 Spectral Regrowth 400 kHz Offset = -62 dBc PLASTIC Spectral Regrowth 600 kHz Offset = -78 dBc EVM 1.5% rms GSM Application Typical GSM Performance: V = 28 Volts, I = 350 mA, P = 45 Watts, DD DQ out Full Frequency Band (920-960 MHz) Power Gain 20 dB Drain Efficiency 68% Features Characterized with Series Equivalent Large-Signal Impedance Parameters Integrated ESD Protection 225C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V - 0.5, +66 Vdc DSS Gate-Source Voltage V - 0.5, +12 Vdc GS Maximum Operation Voltage V 32, +0 Vdc DD Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 81C, 45 W CW 1.0 Case Temperature 79C, 10 W CW 1.1 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 3A (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 66 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 10 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 2 3 Vdc GS(th) (V = 10 Vdc, I = 200 A) DS D Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc GS(Q) (V = 28 Vdc, I = 350 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.05 0.23 0.3 Vdc DS(on) (V = 10 Vdc, I = 1.0 Adc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 1.02 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 27 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 81 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 350 mA, P = 10 W Avg., f = 880 MHz, Single-Carrier DD DQ out N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth 750 kHz Offset. PAR = 9.8 dB 0.01% Probability on CCDF Power Gain G 21 22.1 25 dB ps Drain Efficiency 30.5 32 % D Adjacent Channel Power Ratio ACPR -46 -44 dBc Input Return Loss IRL -19 -9 dB (continued) MRFE6S9045NR1 RF Device Data Freescale Semiconductor 2