DocumentNumber:MRF8S9202N
Freescale Semiconductor
Rev. 1, 2/2012
Technical Data
RFPowerFieldEffectTransistors
N--Channel Enhancement--ModeLateral MOSFETs
MRF8S9202NR3
DesignedforCDMAbasestationapplicationswithfrequenciesfrom920to960
MRF8S9202GNR3
MHz. Can be used in Class AB and Class C for all typical cellular base station
modulationformats.
TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I =
DD DQ
1300mA, P = 58Watts Avg., IQ MagnitudeClipping, ChannelBandwidth=
out
920--960MHz,58WAVG.,28V
3.84MHz, Input SignalPAR = 7.5dB @0.01%Probability onCCDF.
SINGLEW--CDMA
G OutputPAR ACPR
ps D
LATERALN--CHANNEL
Frequency (dB) (%) (dB) (dBc)
RFPOWERMOSFETs
920MHz 19.0 36.3 6.3 --38.2
940MHz 19.1 37.2 6.2 --38.0
960MHz 18.9 37.3 6.1 --37.1
Capableof Handling7:1VSWR, @32Vdc, 920MHz, 290Watts CW Output
Power (3dB Input Overdrivefrom RatedP ). Designedfor
out
EnhancedRuggedness.
CASE2021--03,STYLE1
OM--780--2
Typical P @1dB CompressionPoint 200Watts CW
out
PLASTIC
Features
MRF8S9202NR3
100%PAR Testedfor GuaranteedOutput Power Capability
CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters
andCommonSourceS--Parameters
Internally Matchedfor Easeof Use
IntegratedESD Protection
CASE2267--01
GreaterNegativeGate--SourceVoltageRangeforImprovedClass COperation
OM--780--2 GULL
Designedfor DigitalPredistortionError CorrectionSystems
PLASTIC
Optimizedfor Doherty Applications
MRF8S9202GNR3
225C CapablePlastic Package
InTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13inchReel.
Table1.MaximumRatings
Rating Symbol Value Unit
Drain--SourceVoltage V --0.5,+70 Vdc
DSS
Gate--SourceVoltage V --6.0,+10 Vdc
GS
OperatingVoltage V 32,+0 Vdc
DD
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperature T 150 C
C
(1,2)
OperatingJunctionTemperature T 225 C
J
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
ThermalResistance,JunctiontoCase R C/W
JC
CaseTemperature80C,58W CW,28Vdc,I =1300mA,920MHz 0.31
DQ
CaseTemperature90C,200W CW,28Vdc,I =1300mA,920MHz 0.27
DQ
1. Continuous useatmaximum temperaturewillaffectMTTF.
2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 2
MachineModel(perEIA/JESD22--A115) A
ChargeDeviceModel(perJESD22--C101) IV
Table4.MoistureSensitivityLevel
TestMethodology Rating PackagePeakTemperature Unit
PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C
Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
OffCharacteristics
ZeroGateVoltageDrainLeakageCurrent I 10 Adc
DSS
(V =70Vdc,V =0Vdc)
DS GS
ZeroGateVoltageDrainLeakageCurrent I 1 Adc
DSS
(V =28Vdc,V =0Vdc)
DS GS
Gate--SourceLeakageCurrent I 1 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
OnCharacteristics
GateThresholdVoltage V 1.5 2.3 3.0 Vdc
GS(th)
(V =10Vdc,I =800 Adc)
DS D
GateQuiescentVoltage V 3.1 Vdc
GS(Q)
(V =28Vdc,I =1300mAdc)
DS D
(1)
FixtureGateQuiescentVoltage V 4.6 6.2 7.6 Vdc
GG(Q)
(V =28Vdc,I =1300mAdc,MeasuredinFunctionalTest)
DD D
Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V =10Vdc,I =3.3Adc)
GS D
(2,3)
FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1300mA,P =58W Avg.,f=920MHz,
DD DQ out
Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB @0.01%Probability onCCDF.ACPRmeasuredin3.84MHz
ChannelBandwidth@ 5MHzOffset.
PowerGain G 18.0 19.0 21.0 dB
ps
DrainEfficiency 34.5 36.3 %
D
OutputPeak--to--AverageRatio@0.01%Probability onCCDF PAR 6.0 6.3 dB
AdjacentChannelPowerRatio ACPR --38.2 --35.0 dBc
InputReturnLoss IRL --13 --9 dB
TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1300mA,P =58WAvg.,
DD DQ out
Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB @0.01%Probability onCCDF.ACPRmeasuredin3.84MHz
ChannelBandwidth@ 5MHzOffset.
G OutputPAR ACPR IRL
ps D
Frequency (dB) (%) (dB) (dBc) (dB)
920MHz 19.0 36.3 6.3 --38.2 --13
940MHz 19.1 37.2 6.2 --38.0 --15
960MHz 18.9 37.3 6.1 --37.1 --15
1. V =2xV . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
GG GS(Q)
schematic.
2. Partinternally matchedbothoninputandoutput.
3. Measurementmadewithdeviceinstraightleadconfigurationbeforeany leadformingoperationis applied.
(continued)
MRF8S9202NR3MRF8S9202GNR3
RF DeviceData
FreescaleSemiconductor, Inc.
2