DocumentNumber:MRF8S9120N FreescaleSemiconductor Rev. 0, 9/2010 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF8S9120NR3 DesignedforCDMAbasestationapplicationswithfrequenciesfrom700to 1000MHz. CanbeusedinClassABandClass Cforalltypicalcellularbase stationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 800mA, P = 33Watts Avg., IQ MagnitudeClipping, Channel out 865--960MHz,33WAVG.,28V Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability SINGLEW--CDMA onCCDF. LATERALN--CHANNEL G OutputPAR ACPR ps D RFPOWERMOSFET Frequency (dB) (%) (dB) (dBc) 920MHz 20.1 34.6 6.3 --37.2 940MHz 20.0 34.3 6.3 --37.3 960MHz 19.8 34.2 6.3 --37.4 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 120Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out EnhancedRuggedness Typical P 1dB CompressionPoint 120Watts CW CASE 2021--03,STYLE1 out OM--780--2 880MHz PLASTIC TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 800mA, P = 33Watts Avg., IQ MagnitudeClipping, Channel out Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability onCCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 865MHz 20.8 35.0 6.2 --37.1 880MHz 20.8 35.0 6.2 --37.5 895MHz 20.6 34.8 6.2 --38.0 Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications 225C CapablePlastic Package RoHSCompliant InTapeandReel. R3Suffix = 250Units per 32mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature76C,33W CW,28Vdc,I =800mA,960MHz 0.62 DQ CaseTemperature76C,120W CW,28Vdc,I =800mA,960MHz 0.51 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.4 2.2 2.9 Vdc GS(th) (V =10Vdc,I =460 Adc) DS D GateQuiescentVoltage V 2.3 3.1 3.8 Vdc GS(Q) (V =28Vdc,I =800mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =33W Avg.,f=960MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF. ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 19.0 19.8 22.0 dB ps DrainEfficiency 33.0 34.2 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 6.0 6.3 dB AdjacentChannelPowerRatio ACPR --37.4 --36.4 dBc InputReturnLoss IRL --20 --12 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =33WAvg., DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF. ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 920MHz 20.1 34.6 6.3 --37.2 --14 940MHz 20.0 34.3 6.3 --37.3 --24 960MHz 19.8 34.2 6.3 --37.4 --20 1. MTTFcalculatoravailableat