X-On Electronics has gained recognition as a prominent supplier of MRF8S9120NR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S9120NR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S9120NR3 NXP

MRF8S9120NR3 electronic component of NXP
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Part No.MRF8S9120NR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors HV8 900MHZ 120W OM780-2
Datasheet: MRF8S9120NR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 84.9659
10 : USD 79.6147
50 : USD 78.8672
100 : USD 77.3722
250 : USD 76.1619
500 : USD 75.4975
1000 : USD 75.4856
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
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We are delighted to provide the MRF8S9120NR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S9120NR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8S9120N FreescaleSemiconductor Rev. 0, 9/2010 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF8S9120NR3 DesignedforCDMAbasestationapplicationswithfrequenciesfrom700to 1000MHz. CanbeusedinClassABandClass Cforalltypicalcellularbase stationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 800mA, P = 33Watts Avg., IQ MagnitudeClipping, Channel out 865--960MHz,33WAVG.,28V Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability SINGLEW--CDMA onCCDF. LATERALN--CHANNEL G OutputPAR ACPR ps D RFPOWERMOSFET Frequency (dB) (%) (dB) (dBc) 920MHz 20.1 34.6 6.3 --37.2 940MHz 20.0 34.3 6.3 --37.3 960MHz 19.8 34.2 6.3 --37.4 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 120Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out EnhancedRuggedness Typical P 1dB CompressionPoint 120Watts CW CASE 2021--03,STYLE1 out OM--780--2 880MHz PLASTIC TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 800mA, P = 33Watts Avg., IQ MagnitudeClipping, Channel out Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability onCCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 865MHz 20.8 35.0 6.2 --37.1 880MHz 20.8 35.0 6.2 --37.5 895MHz 20.6 34.8 6.2 --38.0 Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications 225C CapablePlastic Package RoHSCompliant InTapeandReel. R3Suffix = 250Units per 32mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature76C,33W CW,28Vdc,I =800mA,960MHz 0.62 DQ CaseTemperature76C,120W CW,28Vdc,I =800mA,960MHz 0.51 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.4 2.2 2.9 Vdc GS(th) (V =10Vdc,I =460 Adc) DS D GateQuiescentVoltage V 2.3 3.1 3.8 Vdc GS(Q) (V =28Vdc,I =800mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =33W Avg.,f=960MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF. ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 19.0 19.8 22.0 dB ps DrainEfficiency 33.0 34.2 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 6.0 6.3 dB AdjacentChannelPowerRatio ACPR --37.4 --36.4 dBc InputReturnLoss IRL --20 --12 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =33WAvg., DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF. ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 920MHz 20.1 34.6 6.3 --37.2 --14 940MHz 20.0 34.3 6.3 --37.3 --24 960MHz 19.8 34.2 6.3 --37.4 --20 1. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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