DocumentNumber:MRF8S9200N FreescaleSemiconductor Rev. 1, 5/2010 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET Designed for CDMA base station applications with frequencies from 920 to MRF8S9200NR3 960MHz.CanbeusedinClassABandClassCforalltypicalcellularbase stationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1400mA, P = 58Watts Avg., IQ MagnitudeClipping, Channel out Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability onCCDF. 920--960MHz,58WAVG.,28V G OutputPAR ACPR ps D SINGLEW--CDMA Frequency (dB) (%) (dB) (dBc) LATERALN--CHANNEL 920MHz 19.9 37.7 6.1 --36.2 RFPOWERMOSFET 940MHz 19.9 37.1 6.1 --36.6 960MHz 19.5 36.8 6.0 --36.0 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 300Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out EnhancedRuggedness Typical P 1dB CompressionPoint 200Watts CW out Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters CASE2021--03,STYLE1 andCommonSourceS--Parameters OM--780--2 Internally Matchedfor Easeof Use PLASTIC IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation 225C CapablePlastic Package Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications RoHSCompliant InTapeandReel. R3Suffix = 250Units per 32mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,58W CW,28Vdc,I =1400mA 0.30 DQ CaseTemperature80C,200W CW,28Vdc,I =1400mA 0.25 DQ 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.5 2.3 3 Vdc GS(th) (V =10Vdc,I =400 Adc) DS D GateQuiescentVoltage V 2.3 3 3.8 Vdc GS(Q) (V =28Vdc,I =1400mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =3.3Adc) GS D (1) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1400mA,P =58W Avg.,f=940MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 18 19.9 21 dB ps DrainEfficiency 34 37.1 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.8 6.1 dB AdjacentChannelPowerRatio ACPR --36.6 --35 dBc InputReturnLoss IRL --22 --9 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1400mA,P =58WAvg., DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 920MHz 19.9 37.7 6.1 --36.2 --14 940MHz 19.9 37.1 6.1 --36.6 --22 960MHz 19.5 36.8 6.0 --36.0 --15 1. Partinternally matchedbothoninputandoutput. (continued) MRF8S9200NR3 RF DeviceData FreescaleSemiconductor 2