X-On Electronics has gained recognition as a prominent supplier of MRF8S9200NR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S9200NR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S9200NR3 NXP

MRF8S9200NR3 electronic component of NXP
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Part No.MRF8S9200NR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET HV8 900MHz 58W OM780-2
Datasheet: MRF8S9200NR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 174.3727
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Gate-Source Breakdown Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the MRF8S9200NR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S9200NR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8S9200N FreescaleSemiconductor Rev. 1, 5/2010 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET Designed for CDMA base station applications with frequencies from 920 to MRF8S9200NR3 960MHz.CanbeusedinClassABandClassCforalltypicalcellularbase stationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1400mA, P = 58Watts Avg., IQ MagnitudeClipping, Channel out Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability onCCDF. 920--960MHz,58WAVG.,28V G OutputPAR ACPR ps D SINGLEW--CDMA Frequency (dB) (%) (dB) (dBc) LATERALN--CHANNEL 920MHz 19.9 37.7 6.1 --36.2 RFPOWERMOSFET 940MHz 19.9 37.1 6.1 --36.6 960MHz 19.5 36.8 6.0 --36.0 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 300Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out EnhancedRuggedness Typical P 1dB CompressionPoint 200Watts CW out Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters CASE2021--03,STYLE1 andCommonSourceS--Parameters OM--780--2 Internally Matchedfor Easeof Use PLASTIC IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation 225C CapablePlastic Package Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications RoHSCompliant InTapeandReel. R3Suffix = 250Units per 32mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,58W CW,28Vdc,I =1400mA 0.30 DQ CaseTemperature80C,200W CW,28Vdc,I =1400mA 0.25 DQ 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.5 2.3 3 Vdc GS(th) (V =10Vdc,I =400 Adc) DS D GateQuiescentVoltage V 2.3 3 3.8 Vdc GS(Q) (V =28Vdc,I =1400mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =3.3Adc) GS D (1) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1400mA,P =58W Avg.,f=940MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 18 19.9 21 dB ps DrainEfficiency 34 37.1 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.8 6.1 dB AdjacentChannelPowerRatio ACPR --36.6 --35 dBc InputReturnLoss IRL --22 --9 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1400mA,P =58WAvg., DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 920MHz 19.9 37.7 6.1 --36.2 --14 940MHz 19.9 37.1 6.1 --36.6 --22 960MHz 19.5 36.8 6.0 --36.0 --15 1. Partinternally matchedbothoninputandoutput. (continued) MRF8S9200NR3 RF DeviceData FreescaleSemiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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NXP SEMI
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