DocumentNumber:MRF7S27130H FreescaleSemiconductor Rev. 2, 3/2011 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF7S27130HR3 DesignedforWiMAXbasestationapplications withfrequencies upto MRF7S27130HSR3 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. Typical WiMAX Performance: V =28Volts,I = 1500 mA, DD DQ 3 P = 23Watts Avg., f = 2700MHz, 802.16d, 64QAM / , 4bursts, out 4 2500--2700MHz,23WAVG.,28V 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB 0.01% Probability WiMAX onCCDF. LATERALN--CHANNEL Power Gain 16.5 dB RFPOWERMOSFETs Drain Efficiency 20% DeviceOutput Signal PAR 8.2dB 0.01%Probability onCCDF ACPR 5.25MHz Offset --49dBc in0.5MHz Channel Bandwidth Capable of Handling 10:1 VSWR, 32 Vdc, 2600 MHz, 105 Watts CW Output Power Features CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters Internally Matchedfor Easeof Use CASE465--06,STYLE1 IntegratedESD Protection NI--780 Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MRF7S27130HR3 Operation RoHSCompliant In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. CASE465A--06,STYLE1 NI--780S MRF7S27130HSR3 Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J CW Operation T =25C CW 150 W C Derate above 25C 0.83 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 80C, 104 W CW 0.32 Case Temperature 69C, 23 W CW 0.36 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B (Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =348Adc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V =28Vdc,I =1500mAdc) DS D (1) Fixture Gate Quiescent Voltage V 4 5.4 7 Vdc GG(Q) (V =28Vdc,I =1500 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.24 0.3 Vdc DS(on) (V =10Vdc,I =3.4Adc) GS D (2) DynamicCharacteristics Reverse TransferCapacitance C 10.4 pF rss (V =28Vdc30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 711 pF oss (V =28Vdc30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 326 pF iss (V =28Vdc,V =0Vdc30 mV(rms)ac 1 MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1500 mA, P =23W Avg., f =2700MHz, DD DQ out 3 WiMAX Signal, 802.16d, 7 MHz ChannelBandwidth, 64 QAM / , 4 Bursts, PAR=9.5 dB 0.01%Probability on CCDF. ACPRmeasured 4 in 0.5 MHz ChannelBandwidth 5.25 MHz Offset. PowerGain G 15 16.5 18.5 dB ps Drain Efficiency 18 20 23 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 7.5 8.2 dB Adjacent ChannelPowerRatio ACPR --49 --46 dBc Input Return Loss IRL --8 --5 dB 1. V =2xV . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. (continued) MRF7S27130HR3MRF7S27130HSR3 RF DeviceData Freescale Semiconductor 2