DocumentNumber:MRF8S18210WHS FreescaleSemiconductor Rev.0,4/2012 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S18210WHSR3 DesignedforCDMAbasestation applications with frequencies from1805MHz MRF8S18210WGHSR3 to1995MHz.CanbeusedinClassABandClass Cforalltypicalcellularbase stationmodulationformats. 1805MHz -- 1995MHz Typical Single--Carrier W--CDMA Performance: V =30Volts,I = DD DQ 50WAVG.,30V 1300 mA, P = 50 Watts Avg., IQ Magnitude Clipping, Channel out Bandwidth= 3.84MHz, Input Signal PAR = 9.9dB 0.01% Probability SINGLEW--CDMA onCCDF. LATERALN--CHANNEL RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1930 MHz 17.8 29.2 7.0 --34.2 1960 MHz 17.8 28.2 7.0 --34.4 1995 MHz 18.1 27.6 7.1 --34.3 (1) Capable of Handling 10:1 VSWR, 32 Vdc, 1840 MHz, 268 Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out NI--880XS--2 Typical P 1dB CompressionPoint 210Watts CW out MRF8S18210WHSR3 1800MHz Typical Single--Carrier W--CDMA Performance: V =30Volts,I = DD DQ 1300 mA, P = 50 Watts Avg., IQ Magnitude Clipping, Channel out Bandwidth= 3.84MHz, Input Signal PAR = 9.9dB 0.01% Probability onCCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805 MHz 18.2 30.1 7.3 --35.1 NI--880XS--2GULL 1840 MHz 18.1 29.1 7.4 --35.4 MRF8S18210WGHSR3 1880 MHz 18.2 27.8 7.4 --35.9 Features Designed for Wide Instantaneous Bandwidth Applications Designed for Wideband Applications that Require 40 MHz Signal Bandwidth 100% PAR Tested for Guaranteed Output Power Capability CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters RF /V21 RF /V in GS out DS andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Range for Improved Class C Operation Designedfor Digital PredistortionError CorrectionSystems (Top View) Optimizedfor Doherty Applications In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Figure1.PinConnections For R5 Tape and Reel option, see p. 17. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 125 C C (2,3) Operating Junction Temperature T 225 C J CW Operation T =25C CW 239 W C Derate above 25C 1.44 W/C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature willaffect MTTF. 3. MTTFcalculatoravailable at Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 81C, 50W CW, 30Vdc, I =1300 mA, 1840 MHz 0.48 DQ (3) Case Temperature 101C, 210 W CW ,30Vdc,I =1300 mA, 1840 MHz 0.44 DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) B Charge Device Model(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =30Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.2 1.9 2.7 Vdc GS(th) (V =10Vdc,I =306 Adc) DS D Gate Quiescent Voltage V 2.0 2.7 3.5 Vdc GS(Q) (V =30Vdc,I =1300 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.24 0.3 Vdc DS(on) (V =10Vdc,I =3.06Adc) GS D (4,5) FunctionalTests (InFreescaleTestFixture,50ohm system)V =30Vdc,I =1300 mA, P =50W Avg., f =1930MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =9.9 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 17.0 17.8 20.0 dB ps Drain Efficiency 26.0 29.2 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 6.7 7.0 dB Adjacent ChannelPowerRatio ACPR --34.2 --30.0 dBc Input Return Loss IRL --9 --7 dB TypicalBroadbandPerformance (InFreescaleTestFixture,50ohm system)V =30Vdc,I =1300 mA, P =50WAvg., DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =9.9 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1930 MHz 17.8 29.2 7.0 --34.2 --9 1960 MHz 17.8 28.2 7.0 --34.4 --9 1995 MHz 18.1 27.6 7.1 --34.3 --13 1. MTTFcalculatoravailable at