DocumentNumber:MRF8S21200H FreescaleSemiconductor Rev. 2, 10/2010 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S21200HR6 Designed for W--CDMA and LTE base station applications with frequencies MRF8S21200HSR6 from 2110 to 2170MHz. Canbe usedin Class AB andClass C for alltypical cellular basestationmodulationformats. Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 2110--2170MHz,48WAVG.,28V 1400 mA, P = 48 Watts Avg., IQ Magnitude Clipping, Channel out W--CDMA,LTE Bandwidth= 3.84MHz, Input Signal PAR = 7.5dB 0.01% Probability LATERALN--CHANNEL onCCDF. RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2110 MHz 17.8 32.6 6.4 --37.7 2140 MHz 18.1 32.6 6.3 --37.1 2170 MHz 18.1 32.9 6.2 --36.2 Capable of Handling 10:1 VSWR, 32 Vdc, 2140 MHz, 250 Watts CW Output Power (3dB Input Overdrivefrom RatedP ) CASE375D--05,STYLE1 out NI--1230 Features MRF8S21200HR6 100% PAR Tested for Guaranteed Output Power Capability CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Designedfor Digital PredistortionError CorrectionSystems CASE375E--04,STYLE1 RoHSCompliant NI--1230S MRF8S21200HSR6 In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc RF /V31 RF /V DSS in GS out DS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD RF /V42 RF /V in GS out DS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J (Top View) CW Operation T =25C CW 200 W A Figure1.PinConnections Derate above 25C 1.6 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 76C, 48W CW, 28Vdc, I =1400 mA 0.31 DQ Case Temperature 81C, 200W CW, 28Vdc, I =1400 mA 0.27 DQ 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2(Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.2 2.0 2.7 Vdc GS(th) (V =10Vdc,I =300Adc) DS D Gate Quiescent Voltage V 2.0 2.7 3.5 Vdc GS(Q) (V =28Vdc,I =1400 mA, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.17 0.3 Vdc DS(on) (V =10Vdc,I =3Adc) GS D (1) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1400 mA, P =48W Avg., f =2140MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 16.5 18.1 19.5 dB ps Drain Efficiency 30.0 32.6 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 5.7 6.3 dB Adjacent ChannelPowerRatio ACPR --37.1 --35.0 dBc Input Return Loss IRL --15 --7 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1400 mA, P =48WAvg., DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110 MHz 17.8 32.6 6.4 --37.7 --15 2140 MHz 18.1 32.6 6.3 --37.1 --15 2170 MHz 18.1 32.9 6.2 --36.2 --13 1. Part internally matched both on input and output. (continued) MRF8S21200HR6MRF8S21200HSR6 RF DeviceData Freescale Semiconductor 2