DocumentNumber:MRF8S7170N FreescaleSemiconductor Rev. 2, 2/2014 Technical Data RFPowerFieldEffectTransistor N--Channel Enhancement--Mode Lateral MOSFET MRF8S7170NR3 Designedforbasestationapplicationswithfrequenciesfrom618to 803 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1200 mA, P = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = out 618--803MHz,50WAVG.,28V 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. SINGLEW--CDMA G OutputPAR ACPR ps D LATERALN--CHANNEL (1) Frequency (dB) (%) (dB) (dBc) RFPOWERMOSFET 728 MHz 19.7 37.1 6.2 --38.7 748 MHz 19.5 37.0 6.1 --37.5 768 MHz 19.4 37.9 6.1 --37.8 Capable of Handling 10:1 VSWR, 32 Vdc, 748 MHz, 170 Watts CW Output Power (3 dB Input Overdrive from Rated P ), Designed for Enhanced out Ruggedness Typical P 1 dB Compression Point 182 Watts CW out Features 100% PAR Tested for Guaranteed Output Power Capability OM--780--2L PLASTIC Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems 225C Capable Plastic Package In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13--inch Reel. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +70 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (2,3) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (3,4) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 80C, 170 W CW, 28 Vdc, I =1200 mA 0.30 DQ Case Temperature 81C, 50 W CW, 28 Vdc, I =1200 mA 0.37 DQ 1. This part is not recommended forDoherty applications across the 600 to 728 MHz band. 2. Continuous use at maximum temperature willaffect MTTF. 3. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.5 2.3 3 Vdc GS(th) (V =10Vdc,I =355 Adc) DS D Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc GS(Q) (V =28Vdc,I =1200 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.22 0.3 Vdc DS(on) (V =10Vdc,I =2.9Adc) GS D (1) FunctionalTests (In Freescale Test Fixture, 50 ohm system)V =28Vdc,I =1200 mA, P =50 W Avg., f =748 MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 18.0 19.5 21.0 dB ps Drain Efficiency 34.0 37.0 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 5.7 6.1 dB Adjacent ChannelPowerRatio ACPR --37.5 --35.0 dBc Input Return Loss IRL --24 --9 dB TypicalBroadbandPerformance(In Freescale Test Fixture, 50 ohm system)V =28Vdc,I =1200 mA, P =50WAvg., DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 728 MHz 19.7 37.1 6.2 --38.7 --13 748 MHz 19.5 37.0 6.1 --37.5 --24 768 MHz 19.4 37.9 6.1 --37.8 --16 1. Part internally matched both on input and output. (continued) MRF8S7170NR3 RF DeviceData Freescale Semiconductor, Inc. 2