X-On Electronics has gained recognition as a prominent supplier of MRF8S9100HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S9100HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S9100HR5 NXP

MRF8S9100HR5 electronic component of NXP
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Part No.MRF8S9100HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 70V 3-Pin NI-780 T/R
Datasheet: MRF8S9100HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 90.2507 ea
Line Total: USD 90.25 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MRF8S9100HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S9100HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8S9100H FreescaleSemiconductor Rev. 1, 10/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S9100HR3 DesignedforGSMandGSMEDGEbasestationapplicationswith MRF8S9100HSR3 frequenciesfrom865to960MHz.CanbeusedinClassABandClassCforall typicalcellular basestationmodulationformats. TypicalGSM Performance: V =28Volts,I = 500mA, P = DD DQ out 72Watts CW 920--960MHz,72WCW,28V G ps D GSM,GSMEDGE Frequency (dB) (%) LATERALN--CHANNEL 920MHz 19.3 51.6 RFPOWERMOSFETs 940MHz 19.3 52.9 960MHz 19.1 54.1 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 133Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out Typical P 1dB CompressionPoint 108Watts CW CASE465--06,STYLE1 out NI--780 TypicalGSM EDGE Performance: V =28Volts,I = 700mA, P = DD DQ out MRF8S9100HR3 45Watts Avg. SR1 SR2 G 400kHz 600kHz EVM ps D Frequency (dB) (%) (dBc) (dBc) (%rms) 920MHz 19.1 43 --64.1 --74.5 1.8 CASE465A--06,STYLE1 940MHz 19.1 44 --63.6 --74.6 2.0 NI--780S 960MHz 19.0 45 --62.8 --75.1 2.3 MRF8S9100HSR3 Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RoHSCompliant InTapeandReel. R3Suffix = 250Units per 56mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,100W CW,28Vdc,I =500mA 0.60 DQ CaseTemperature81C,72W CW,28Vdc,I =500mA 0.65 DQ CaseTemperature82C,45W CW,28Vdc,I =700mA 0.69 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.4 2.2 2.9 Vdc GS(th) (V =10Vdc,I =460Adc) DS D GateQuiescentVoltage V 2.1 2.9 3.6 Vdc GS(Q) (V =28Vdc,I =500mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.17 0.3 Vdc DS(on) (V =10Vdc,I =1.7Adc) GS D (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =500mA,P =72WCW,f=920MHz DD DQ out PowerGain G 18 19.3 23 dB ps DrainEfficiency 50 51.6 % D InputReturnLoss IRL --12.4 --9 dB P 1dB CompressionPoint,CW P1dB 100 W out TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =500mA,P =72WCW DD DQ out G IRL ps D Frequency (dB) (%) (dB) 920MHz 19.3 51.6 --12.4 940MHz 19.3 52.9 --14.3 960MHz 19.1 54.1 --12.2 1. MTTFcalculatoravailableat

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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