DocumentNumber:MRF8S23120H FreescaleSemiconductor Rev. 0, 11/2010 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S23120HR3 Designed for LTE base station applications with frequencies from 2300 to MRF8S23120HSR3 2400MHz. CanbeusedinClassABandClass Cforalltypicalcellularbase stationmodulationformats. Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 800 mA, P = 28 Watts Avg., IQ Magnitude Clipping, Channel out 2300--2400MHz,28WAVG.,28V Bandwidth= 3.84MHz, Input Signal PAR = 7.5 dB 0.01% Probability LTE onCCDF. LATERALN--CHANNEL G OutputPAR ACPR ps D RFPOWERMOSFETs Frequency (dB) (%) (dB) (dBc) 2300 MHz 16.0 31.9 6.1 --37.1 2350 MHz 16.3 30.9 6.4 --37.9 2400 MHz 16.6 31.2 6.3 --37.5 (1) Capableof Handling5:1VSWR, 30Vdc, 2350MHz, 138Watts CW Output Power (2dB Input Overdrivefrom RatedP ) out Typical P 1dB CompressionPoint 107Watts CW out CASE465--06,STYLE1 Features NI--780 100% PAR Tested for Guaranteed Output Power Capability MRF8S23120HR3 CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Designedfor Digital PredistortionError CorrectionSystems CASE465A--06,STYLE1 Optimizedfor Doherty Applications NI--780S RoHSCompliant MRF8S23120HSR3 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (2,3) Operating Junction Temperature T 225 C J CW Operation T =25C CW 109 W C Derate above 25C 0.52 W/C Table2.ThermalCharacteristics (3,4) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 76C, 28W CW, 28Vdc, I =800 mA, 2400 MHz 0.50 DQ (1) Case Temperature 80C, 120 W CW ,28Vdc,I =800 mA, 2400 MHz 0.47 DQ 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature willaffect MTTF. 3. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2(Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.0 1.8 2.5 Vdc GS(th) (V =10Vdc,I =172 Adc) DS D Gate Quiescent Voltage V 1.8 2.6 3.3 Vdc GS(Q) (V =28Vdc,I =800 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =1.72Adc) GS D (1) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA, P =28W Avg., f =2300MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 14.5 16.0 17.5 dB ps Drain Efficiency 29.0 31.9 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 5.7 6.1 dB Adjacent ChannelPowerRatio ACPR --37.1 --35.0 dBc Input Return Loss IRL --12 --7 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA, P =28WAvg., DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2300 MHz 16.0 31.9 6.1 --37.1 --12 2350 MHz 16.3 30.9 6.4 --37.9 --19 2400 MHz 16.6 31.2 6.3 --37.5 --18 1. Part internally matched both on input and output. (continued) MRF8S23120HR3MRF8S23120HSR3 RF DeviceData Freescale Semiconductor 2