DocumentNumber:MRF8S21100H FreescaleSemiconductor Rev. 1, 3/2011 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S21100HR3 Designed for W--CDMA and LTE base station applications with frequencies MRF8S21100HSR3 from 2110 to 2170MHz. Canbe usedin Class AB andClass C for alltypical cellular basestationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 2110--2170MHz,24WAVG.,28V 700mA, P = 24Watts Avg., IQ MagnitudeClipping, Channel out W--CDMA,LTE Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability LATERALN--CHANNEL onCCDF. RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2110MHz 17.9 33.0 6.4 --38.7 2140MHz 18.1 33.0 6.4 --38.2 2170MHz 18.3 33.4 6.3 --37.2 (1) Capableof Handling10:1VSWR, 32Vdc, 2140MHz, 138Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out CASE465--06,STYLE1 NI--780 Typical P 1dB CompressionPoint 100Watts CW out MRF8S21100HR3 Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C CASE465A--06,STYLE1 Operation NI--780S Designedfor DigitalPredistortionError CorrectionSystems MRF8S21100HSR3 Optimizedfor Doherty Applications RoHSCompliant InTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13inchReel. For R5TapeandReel option, seep. 14. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (2,3) OperatingJunctionTemperature T 225 C J CW Operation T =25C CW 108 W C Derateabove25C 0.57 W/C Table2.ThermalCharacteristics (3,4) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature77C,24W CW,28Vdc,I =700mA,2140MHz 0.48 DQ (1) CaseTemperature80C,100W CW ,28Vdc,I =700mA,2140MHz 0.45 DQ 1. Exceeds recommendedoperatingconditions.See CW operationdatainMaximum Ratings table. 2. Continuous useatmaximum temperaturewillaffectMTTF. 3. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 2.0 2.7 Vdc GS(th) (V =10Vdc,I =150Adc) DS D GateQuiescentVoltage V 2.7 Vdc GS(Q) (V =28Vdc,I =700mAdc) DS D (1) FixtureGateQuiescentVoltage V 4.0 5.4 7.0 Vdc GG(Q) (V =28Vdc,I =700mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.24 0.3 Vdc DS(on) (V =10Vdc,I =1.5Adc) GS D (2) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =700mA,P =24W Avg.,f=2170MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 17.2 18.3 20.2 dB ps DrainEfficiency 31.0 33.4 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.9 6.3 dB AdjacentChannelPowerRatio ACPR --37.2 --36.0 dBc InputReturnLoss IRL --12 --7 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =700mA,P =24WAvg., DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110MHz 17.9 33.0 6.4 --38.7 --18 2140MHz 18.1 33.0 6.4 --38.2 --16 2170MHz 18.3 33.4 6.3 --37.2 --12 1. V =2xV . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Partinternally matchedbothoninputandoutput. (continued) MRF8S21100HR3MRF8S21100HSR3 RF DeviceData FreescaleSemiconductor 2