X-On Electronics has gained recognition as a prominent supplier of MRF8S21100HSR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S21100HSR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S21100HSR5 NXP

MRF8S21100HSR5 electronic component of NXP
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Part No.MRF8S21100HSR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
Datasheet: MRF8S21100HSR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 124.1135 ea
Line Total: USD 248.23 
Availability - 0
MOQ: 2  Multiples: 2
Pack Size: 2
   
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We are delighted to provide the MRF8S21100HSR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S21100HSR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8S21100H FreescaleSemiconductor Rev. 1, 3/2011 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S21100HR3 Designed for W--CDMA and LTE base station applications with frequencies MRF8S21100HSR3 from 2110 to 2170MHz. Canbe usedin Class AB andClass C for alltypical cellular basestationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 2110--2170MHz,24WAVG.,28V 700mA, P = 24Watts Avg., IQ MagnitudeClipping, Channel out W--CDMA,LTE Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability LATERALN--CHANNEL onCCDF. RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2110MHz 17.9 33.0 6.4 --38.7 2140MHz 18.1 33.0 6.4 --38.2 2170MHz 18.3 33.4 6.3 --37.2 (1) Capableof Handling10:1VSWR, 32Vdc, 2140MHz, 138Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out CASE465--06,STYLE1 NI--780 Typical P 1dB CompressionPoint 100Watts CW out MRF8S21100HR3 Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C CASE465A--06,STYLE1 Operation NI--780S Designedfor DigitalPredistortionError CorrectionSystems MRF8S21100HSR3 Optimizedfor Doherty Applications RoHSCompliant InTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13inchReel. For R5TapeandReel option, seep. 14. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (2,3) OperatingJunctionTemperature T 225 C J CW Operation T =25C CW 108 W C Derateabove25C 0.57 W/C Table2.ThermalCharacteristics (3,4) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature77C,24W CW,28Vdc,I =700mA,2140MHz 0.48 DQ (1) CaseTemperature80C,100W CW ,28Vdc,I =700mA,2140MHz 0.45 DQ 1. Exceeds recommendedoperatingconditions.See CW operationdatainMaximum Ratings table. 2. Continuous useatmaximum temperaturewillaffectMTTF. 3. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 2.0 2.7 Vdc GS(th) (V =10Vdc,I =150Adc) DS D GateQuiescentVoltage V 2.7 Vdc GS(Q) (V =28Vdc,I =700mAdc) DS D (1) FixtureGateQuiescentVoltage V 4.0 5.4 7.0 Vdc GG(Q) (V =28Vdc,I =700mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.24 0.3 Vdc DS(on) (V =10Vdc,I =1.5Adc) GS D (2) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =700mA,P =24W Avg.,f=2170MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 17.2 18.3 20.2 dB ps DrainEfficiency 31.0 33.4 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.9 6.3 dB AdjacentChannelPowerRatio ACPR --37.2 --36.0 dBc InputReturnLoss IRL --12 --7 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =700mA,P =24WAvg., DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110MHz 17.9 33.0 6.4 --38.7 --18 2140MHz 18.1 33.0 6.4 --38.2 --16 2170MHz 18.3 33.4 6.3 --37.2 --12 1. V =2xV . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Partinternally matchedbothoninputandoutput. (continued) MRF8S21100HR3MRF8S21100HSR3 RF DeviceData FreescaleSemiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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