DocumentNumber:MRF8P18265H Freescale Semiconductor Rev. 1, 2/2012 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8P18265HR6 DesignedforCDMAandmulticarrierbasestationapplicationswith MRF8P18265HSR6 frequencies from1805to1880MHz.CanbeusedinClassABandClass Cfor alltypicalcellular basestationmodulationformats. TypicalDoherty Single--Carrier W--CDMA Performance: V =30Volts, DD 1805--1880MHz,72WAVG.,30V I = 800mA, V =1.3V,P = 72Watts Avg., IQ MagnitudeClipping, DQA GSB out SINGLEW--CDMA ChannelBandwidth= 3.84MHz, Input SignalPAR = 9.9dB 0.01% LATERALN--CHANNEL Probability onCCDF. RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805MHz 15.9 44.8 6.9 --31.7 1840MHz 16.1 43.4 7.0 --31.7 1880MHz 16.0 43.7 6.7 --32.2 CASE375I--04 Capableof Handling10:1VSWR, 32Vdc, 1840MHz, 280Watts CW NI--1230--8 Output Power (2dB Input Overdrivefrom RatedP ) out MRF8P18265HR6 Typical P 3dB CompressionPoint 280Watts CW out Features ProductionTestedinaSymmetricalDoherty Configuration 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithLarge--SignalLoad--PullParameters andCommonSource S--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection CASE375J--03 NI--1230S--8 Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation MRF8P18265HSR6 Designedfor DigitalPredistortionError CorrectionSystems InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. N.C.18 VBW A Table1.MaximumRatings Rating Symbol Value Unit RF /V27 RF /V inA GSA outA DSA Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS 36 RF /V RF /V inB GSB outB DSB OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg VBW N.C.45 B CaseOperatingTemperature T 150 C C (TopView) (1,2) OperatingJunctionTemperature T 225 C J Figure1.PinConnections CW Operation T =25C CW 446 W C Derateabove25C 4.5 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature74C,72.5W CW,30Vdc,I =800mA,V =1.3V,1880MHz 0.27 DQA GSB (4) CaseTemperature90C,260W CW ,30Vdc,I =800mA,V =1.3V,1880MHz 0.25 DQA GSB 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =30Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (1) OnCharacteristics GateThresholdVoltage V 1.1 1.9 2.6 Vdc GS(th) (V =10Vdc,I =200 Adc) DS D GateQuiescentVoltage V 1.8 2.6 3.3 Vdc GS(Q) (V =30Vdc,I =800mAdc,MeasuredinFunctionalTest) DD DA Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (2,3) FunctionalTests (InFreescaleDoherty TestFixture,50ohmsystem)V =30Vdc,I =800mA,V =1.3V,P =72WAvg., DD DQA GSB out f=1880MHz,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability onCCDF.ACPRmeasured in3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 13.8 16.0 17.0 dB ps DrainEfficiency 41.0 43.7 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 6.0 6.7 dB AdjacentChannelPowerRatio ACPR --32.2 --28.0 dBc (3) TypicalBroadbandPerformance (InFreescaleDoherty TestFixture,50ohmsystem)V =30Vdc,I =800mA,V =1.3V, DD DQA GSB P =72W Avg.,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability onCCDF.ACPR out measuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805MHz 15.9 44.8 6.9 --31.7 1840MHz 16.1 43.4 7.0 --31.7 1880MHz 16.0 43.7 6.7 --32.2 1. Eachsideofdevicemeasuredseparately. 2. Partinternally matchedbothoninputandoutput. 3. MeasurementmadewithdeviceinasymmetricalDoherty configuration. (continued) MRF8P18265HR6MRF8P18265HSR6 RF DeviceData FreescaleSemiconductor, Inc. 2