X-On Electronics has gained recognition as a prominent supplier of MRF8P18265HSR6 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8P18265HSR6 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8P18265HSR6 NXP

MRF8P18265HSR6 electronic component of NXP
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Part No.MRF8P18265HSR6
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 9-Pin Case 375J-02 T/R
Datasheet: MRF8P18265HSR6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 216.3761 ea
Line Total: USD 216.38 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MRF8P18265HSR6 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8P18265HSR6 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8P18265H Freescale Semiconductor Rev. 1, 2/2012 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8P18265HR6 DesignedforCDMAandmulticarrierbasestationapplicationswith MRF8P18265HSR6 frequencies from1805to1880MHz.CanbeusedinClassABandClass Cfor alltypicalcellular basestationmodulationformats. TypicalDoherty Single--Carrier W--CDMA Performance: V =30Volts, DD 1805--1880MHz,72WAVG.,30V I = 800mA, V =1.3V,P = 72Watts Avg., IQ MagnitudeClipping, DQA GSB out SINGLEW--CDMA ChannelBandwidth= 3.84MHz, Input SignalPAR = 9.9dB 0.01% LATERALN--CHANNEL Probability onCCDF. RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805MHz 15.9 44.8 6.9 --31.7 1840MHz 16.1 43.4 7.0 --31.7 1880MHz 16.0 43.7 6.7 --32.2 CASE375I--04 Capableof Handling10:1VSWR, 32Vdc, 1840MHz, 280Watts CW NI--1230--8 Output Power (2dB Input Overdrivefrom RatedP ) out MRF8P18265HR6 Typical P 3dB CompressionPoint 280Watts CW out Features ProductionTestedinaSymmetricalDoherty Configuration 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithLarge--SignalLoad--PullParameters andCommonSource S--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection CASE375J--03 NI--1230S--8 Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation MRF8P18265HSR6 Designedfor DigitalPredistortionError CorrectionSystems InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. N.C.18 VBW A Table1.MaximumRatings Rating Symbol Value Unit RF /V27 RF /V inA GSA outA DSA Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS 36 RF /V RF /V inB GSB outB DSB OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg VBW N.C.45 B CaseOperatingTemperature T 150 C C (TopView) (1,2) OperatingJunctionTemperature T 225 C J Figure1.PinConnections CW Operation T =25C CW 446 W C Derateabove25C 4.5 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature74C,72.5W CW,30Vdc,I =800mA,V =1.3V,1880MHz 0.27 DQA GSB (4) CaseTemperature90C,260W CW ,30Vdc,I =800mA,V =1.3V,1880MHz 0.25 DQA GSB 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =30Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (1) OnCharacteristics GateThresholdVoltage V 1.1 1.9 2.6 Vdc GS(th) (V =10Vdc,I =200 Adc) DS D GateQuiescentVoltage V 1.8 2.6 3.3 Vdc GS(Q) (V =30Vdc,I =800mAdc,MeasuredinFunctionalTest) DD DA Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (2,3) FunctionalTests (InFreescaleDoherty TestFixture,50ohmsystem)V =30Vdc,I =800mA,V =1.3V,P =72WAvg., DD DQA GSB out f=1880MHz,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability onCCDF.ACPRmeasured in3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 13.8 16.0 17.0 dB ps DrainEfficiency 41.0 43.7 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 6.0 6.7 dB AdjacentChannelPowerRatio ACPR --32.2 --28.0 dBc (3) TypicalBroadbandPerformance (InFreescaleDoherty TestFixture,50ohmsystem)V =30Vdc,I =800mA,V =1.3V, DD DQA GSB P =72W Avg.,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability onCCDF.ACPR out measuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805MHz 15.9 44.8 6.9 --31.7 1840MHz 16.1 43.4 7.0 --31.7 1880MHz 16.0 43.7 6.7 --32.2 1. Eachsideofdevicemeasuredseparately. 2. Partinternally matchedbothoninputandoutput. 3. MeasurementmadewithdeviceinasymmetricalDoherty configuration. (continued) MRF8P18265HR6MRF8P18265HSR6 RF DeviceData FreescaleSemiconductor, Inc. 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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