DocumentNumber:MRF8P9300H
FreescaleSemiconductor
Rev. 1.1, 7/2010
Technical Data
RFPowerFieldEffectTransistors
N--Channel Enhancement--ModeLateral MOSFETs
MRF8P9300HR6
DesignedforCDMAandmulticarrierGSMbasestationapplicationswith
MRF8P9300HSR6
frequenciesfrom860to960MHz.CanbeusedinClassABandClassCforall
typical cellular basestationmodulationformats.
Typical Single--Carrier W--CDMA Performance: V =28Volts,I =
DD DQ
2400 mA, P = 100 Watts Avg., IQ Magnitude Clipping, Channel
out
920--960MHz,100WAVG.,28V
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
SINGLEW--CDMA
onCCDF.
LATERALN--CHANNEL
RFPOWERMOSFETs
G OutputPAR ACPR
ps D
Frequency (dB) (%) (dB) (dBc)
920 MHz 19.6 35.4 6.0 --37.3
940 MHz 19.6 35.6 6.0 --37.1
960 MHz 19.4 35.8 5.9 --36.7
Capable of Handling10:1 VSWR, @ 32Vdc, 940 MHz, 425 Watts CW
Output Power (3dB Input Overdrivefrom RatedP ), Designedfor
out
CASE375D--05,STYLE1
Enhanced Ruggedness
NI--1230
Typical P @ 1dB CompressionPoint 326Watts CW
out
MRF8P9300HR6
880MHz
Typical Single--Carrier W--CDMA Performance: V =28Volts,I =
DD DQ
2400 mA, P = 100 Watts Avg., IQ Magnitude Clipping, Channel
out
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
onCCDF.
G OutputPAR ACPR
ps D
CASE375E--04,STYLE1
Frequency (dB) (%) (dB) (dBc)
NI--1230S
865 MHz 20.5 35.2 6.0 --36.1
MRF8P9300HSR6
880 MHz 20.7 36.0 6.0 --36.1
895 MHz 20.6 37.0 6.0 --35.8
Features
100% PAR Tested for Guaranteed Output Power Capability
RF /V31 RF /V
inA GSA outA DSA
CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters
andCommonSourceS--Parameters
Internally Matchedfor Easeof Use
IntegratedESD Protection RF /V42 RF /V
inB GSB outB DSB
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designedfor Digital PredistortionError CorrectionSystems
Optimizedfor Doherty Applications
(Top View)
RoHSCompliant
Figure1.PinConnections
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table1.MaximumRatings
Rating Symbol Value Unit
Drain--Source Voltage V --0.5, +70 Vdc
DSS
Gate--Source Voltage V --6.0, +10 Vdc
GS
Operating Voltage V 32, +0 Vdc
DD
Storage Temperature Range T --65 to +150 C
stg
Case Operating Temperature T 150 C
C
(1,2)
Operating Junction Temperature T 225 C
J
1. Continuous use at maximum temperature willaffect MTTF.
2. MTTFcalculatoravailable at Table2.ThermalCharacteristics
(1,2)
Characteristic Symbol Value Unit
ThermalResistance, Junction to Case R C/W
JC
Case Temperature 75C, 100W CW, 28Vdc, I =2400 mA 0.22
DQ
Case Temperature 80C, 300W CW, 28Vdc, I =2400 mA 0.20
DQ
Table3.ESDProtectionCharacteristics
TestMethodology Class
Human Body Model(perJESD22--A114) 2(Minimum)
Machine Model(perEIA/JESD22--A115) A (Minimum)
Charge Device Model(perJESD22--C101) IV (Minimum)
Table4.ElectricalCharacteristics (T =25Cunless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(3)
OffCharacteristics
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V =70Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 1 Adc
DSS
(V =28Vdc,V =0Vdc)
DS GS
Gate--Source Leakage Current I 1 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
OnCharacteristics
(3)
Gate Threshold Voltage V 1.5 2.3 3 Vdc
GS(th)
(V =10Vdc,I =400 Adc)
DS D
Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc
GS(Q)
(V =28Vdc,I =2400 mA, Measured in FunctionalTest)
DD DQ
(3)
Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V =10Vdc,I =3Adc)
GS D
(4)
FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =2400 mA, P =100W Avg., f =960MHz,
DD DQ out
Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB @ 0.01%Probability on CCDF. ACPR measured in 3.84 MHz
ChannelBandwidth @ 5MHzOffset.
PowerGain G 18.0 19.4 21.0 dB
ps
Drain Efficiency 32.0 35.8 %
D
Output Peak--to--Average Ratio @ 0.01%Probability on CCDF PAR 5.6 5.9 dB
Adjacent ChannelPowerRatio ACPR --36.7 --34.0 dBc
Input Return Loss IRL --16 --10 dB
TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =2400 mA, P =100 W Avg.,
DD DQ out
Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB @ 0.01%Probability on CCDF. ACPR measured in 3.84 MHz
ChannelBandwidth @ 5MHzOffset.
G OutputPAR ACPR IRL
ps D
Frequency (dB) (%) (dB) (dBc) (dB)
920 MHz 19.6 35.4 6.0 --37.3 --9
940 MHz 19.6 35.6 6.0 --37.1 --12
960 MHz 19.4 35.8 5.9 --36.7 --16
1. MTTFcalculatoravailable at