X-On Electronics has gained recognition as a prominent supplier of MRF8S18120HSR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S18120HSR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S18120HSR3 NXP

MRF8S18120HSR3 electronic component of NXP
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Part No.MRF8S18120HSR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: NXP Freescale RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
Datasheet: MRF8S18120HSR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 4
Multiples : 4
4 : USD 126.4266
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 115.2067
5 : USD 112.965
10 : USD 112.3263
25 : USD 107.5657
50 : USD 106.0953
100 : USD 105.9868
250 : USD 105.9868
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Number Of Channels
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the MRF8S18120HSR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S18120HSR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8S18120H FreescaleSemiconductor Rev. 1, 10/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S18120HR3 Designed for GSM and GSM EDGE base station applications with frequen- MRF8S18120HSR3 ciesfrom1805to1880MHz.CanbeusedinClassABandClassCforall typicalcellular basestationmodulationformats. TypicalGSM Performance: V =28Volts,I = 800mA, P = DD DQ out 72Watts CW 1805--1880MHz,72WCW,28V G ps D GSM,GSMEDGE Frequency (dB) (%) LATERALN--CHANNEL 1805MHz 18.2 49.8 RFPOWERMOSFETs 1840MHz 18.6 51.4 1880MHz 18.7 53.9 Capableof Handling7:1VSWR, 32Vdc, 1840MHz, 150Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out Typical P 1dB CompressionPoint 120Watts CW out CASE465--06,STYLE1 TypicalGSM EDGE Performance: V =28Volts,I = 800mA, P = DD DQ out NI--780 46Watts Avg. MRF8S18120HR3 SR1 SR2 G 400kHz 600kHz EVM ps D Frequency (dB) (%) (dBc) (dBc) (%rms) 1805MHz 17.9 41.0 --64 --76 1.6 CASE465A--06,STYLE1 1840MHz 18.2 41.9 --63 --76 1.7 NI--780S 1880MHz 18.3 43.2 --61 --76 2.0 MRF8S18120HSR3 Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Optimizedfor Doherty Applications RoHSCompliant InTapeandReel. R3Suffix = 250Units per 56mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature79C,72W CW,28Vdc,I =800mA 0.47 DQ CaseTemperature79C,120W CW,28Vdc,I =800mA 0.46 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 1.8 2.7 Vdc GS(th) (V =10Vdc,I =260Adc) DS D GateQuiescentVoltage V 1.8 2.6 3.3 Vdc GS(Q) (V =28Vdc,I =800mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =2.3Adc) GS D (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =72W CW,f=1805MHz DD DQ out PowerGain G 17 18.2 20 dB ps DrainEfficiency 48 49.8 % D InputReturnLoss IRL --11 --8 dB P 1dB CompressionPoint,CW P1dB 112 W out TypicalBroadbandPerformance (InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =72WCW DD DQ out G IRL ps D Frequency (dB) (%) (dB) 1805MHz 18.2 49.8 --11 1840MHz 18.6 51.4 --15 1880MHz 18.7 53.9 --12 1. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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