DocumentNumber:MRF8S18120H FreescaleSemiconductor Rev. 1, 10/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S18120HR3 Designed for GSM and GSM EDGE base station applications with frequen- MRF8S18120HSR3 ciesfrom1805to1880MHz.CanbeusedinClassABandClassCforall typicalcellular basestationmodulationformats. TypicalGSM Performance: V =28Volts,I = 800mA, P = DD DQ out 72Watts CW 1805--1880MHz,72WCW,28V G ps D GSM,GSMEDGE Frequency (dB) (%) LATERALN--CHANNEL 1805MHz 18.2 49.8 RFPOWERMOSFETs 1840MHz 18.6 51.4 1880MHz 18.7 53.9 Capableof Handling7:1VSWR, 32Vdc, 1840MHz, 150Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out Typical P 1dB CompressionPoint 120Watts CW out CASE465--06,STYLE1 TypicalGSM EDGE Performance: V =28Volts,I = 800mA, P = DD DQ out NI--780 46Watts Avg. MRF8S18120HR3 SR1 SR2 G 400kHz 600kHz EVM ps D Frequency (dB) (%) (dBc) (dBc) (%rms) 1805MHz 17.9 41.0 --64 --76 1.6 CASE465A--06,STYLE1 1840MHz 18.2 41.9 --63 --76 1.7 NI--780S 1880MHz 18.3 43.2 --61 --76 2.0 MRF8S18120HSR3 Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Optimizedfor Doherty Applications RoHSCompliant InTapeandReel. R3Suffix = 250Units per 56mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature79C,72W CW,28Vdc,I =800mA 0.47 DQ CaseTemperature79C,120W CW,28Vdc,I =800mA 0.46 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 1.8 2.7 Vdc GS(th) (V =10Vdc,I =260Adc) DS D GateQuiescentVoltage V 1.8 2.6 3.3 Vdc GS(Q) (V =28Vdc,I =800mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =2.3Adc) GS D (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =72W CW,f=1805MHz DD DQ out PowerGain G 17 18.2 20 dB ps DrainEfficiency 48 49.8 % D InputReturnLoss IRL --11 --8 dB P 1dB CompressionPoint,CW P1dB 112 W out TypicalBroadbandPerformance (InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA,P =72WCW DD DQ out G IRL ps D Frequency (dB) (%) (dB) 1805MHz 18.2 49.8 --11 1840MHz 18.6 51.4 --15 1880MHz 18.7 53.9 --12 1. MTTFcalculatoravailableat