DocumentNumber:MRF8P23160WH FreescaleSemiconductor Rev. 0, 12/2011 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8P23160WHR3 Designed for base station applications with wide instantaneous bandwidth MRF8P23160WHSR3 requirements coveringfrequencies from 2300to2400MHz. TypicalDoherty Single--Carrier W--CDMA Performance: V =28Volts, DD = 600mA, V =1.2Vdc,P = 30Watts Avg., IQ Magnitude I DQA GSB out 2300--2400MHz,30WAVG.,28V Clipping, ChannelBandwidth= 3.84MHz, Input SignalPAR = 9.9dB SINGLEW--CDMA 0.01%Probability onCCDF. LATERALN--CHANNEL G OutputPAR ACPR ps D RFPOWERMOSFETs Frequency (dB) (%) (dB) (dBc) 2300MHz 13.9 37.1 7.9 --31.0 2350MHz 14.1 38.3 7.7 --32.2 2400MHz 13.8 38.3 7.4 --33.1 (1) Capableof Handling10:1VSWR, 30Vdc, 2350MHz, 144Watts CW Output Power (3dB Input Overdrivefrom RatedP ) CASE465M--01,STYLE1 out (2) NI--780--4 Typical P 3dB CompressionPoint 190Watts out MRF8P23160WHR3 Features Designedfor WideInstantaneous BandwidthApplications Designedfor WidebandApplications that Require100MHz SignalBandwidth ProductionTestedinaSymmetricalDoherty Configuration 100%PAR Testedfor GuaranteedOutput Power Capability CASE465H--02,STYLE1 CharacterizedwithLarge--SignalLoad--PullParameters andCommonSource NI--780S--4 S--Parameters MRF8P23160WHSR3 Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems NI--780--4inTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, RF /V31 RF /V inA GSA outA DSA 13inchReel. For R5TapeandReel option, seep. 14. NI--780S--4inTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13inchReel. For R5TapeandReel option, seep. 14. RF /V42 RF /V inB GSB outB DSB (TopView) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 125 C C (3,4) OperatingJunctionTemperature T 225 C J CW Operation T =25C CW 129 W C Derateabove25C 0.48 W/C 1. Exceeds recommendedoperatingconditions.See CW operationdatainMaximum Ratings table. 2. P3dB=P +7.0dBwhereP istheaverageoutputpowermeasuredusinganunclippedW--CDMAsingle--carrierinputsignalwhere avg avg outputPARis compressedto7.0dB 0.01%probability onCCDF. 3. Continuous useatmaximum temperaturewillaffectMTTF. 4. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,30W CW,28Vdc,I =600mA,V =2.4Vdc,2350MHz 0.69 DQA GGB (3) CaseTemperature101C,130W CW ,28Vdc,I =600mA,V =2.4Vdc,2350MHz 0.43 DQA GGB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 5 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 1.9 2.7 Vdc GS(th) (V =10Vdc,I =252 Adc) DS D GateQuiescentVoltage V 2.8 Vdc GSA(Q) (V =28Vdc,I =600mAdc) DS DA (4,5) FixtureGateQuiescentVoltage V 4.1 5.5 7.1 Vdc GGA(Q) (V =28Vdc,I =600mAdc,MeasuredinFunctionalTest) DD DA Drain--SourceOn--Voltage V 0.1 0.24 0.3 Vdc DS(on) (V =10Vdc,I =3.0Adc) GS D (6,7,8) FunctionalTests (InFreescaleDoherty TestFixture,50ohm system)V =28Vdc,I =600mA,V =1.2Vdc,P = DD DQA GSB out 30W Avg.,f=2320MHz,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability onCCDF. ACPRmeasuredon3.84MHz ChannelBandwidth 5MHz Offsett. PowerGain G 12.0 14.1 15.0 dB ps DrainEfficiency 32.0 36.5 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 7.2 7.8 dB AdjacentChannelPowerRatio ACPR --32.2 --28.0 dBc (6,8) TypicalBroadbandPerformance (InFreescaleDoherty TestFixture,50ohm system)V =28Vdc,I =600mA,V =1.2Vdc, DD DQA GSB P =30W Avg.,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability onCCDF.ACPR out measuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2300MHz 13.9 37.1 7.9 --31.0 2350MHz 14.1 38.3 7.7 --32.2 2400MHz 13.8 38.3 7.4 --33.1 1. MTTFcalculatoravailableat