DocumentNumber:MRF8P26080H FreescaleSemiconductor Rev. 0, 12/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8P26080HR3 Designed for W--CDMA and LTE base station applications with frequencies MRF8P26080HSR3 from2500to2700MHz.CanbeusedinClass ABandClass Cforalltypical cellular basestationmodulationformats. TypicalDoherty Single--Carrier W--CDMA CharacterizationPerformance: V =28Volts,I = 300mA, V =1.3Vdc,P = 14Watts Avg., IQ 2500--2700MHz,14WAVG.,28V DD DQA GSB out MagnitudeClipping, ChannelBandwidth= 3.84MHz, Input SignalPAR = W--CDMA,LTE 7.5dB 0.01%Probability onCCDF. LATERALN--CHANNEL RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2570MHz 15.4 39.1 6.8 --33.6 2595MHz 15.2 38.2 6.8 --36.0 2620MHz 15.0 36.9 6.8 --40.0 CASE465M--01,STYLE1 Capableof Handling10:1VSWR, 32Vdc, 2595MHz, 109Watts CW NI--780--4 Output Power (3dB Input Overdrivefrom RatedP ) out MRF8P26080HR3 Typical P 3dB CompressionPoint83Watts CW out Features ProductionTestedinaSymmetricalDoherty Configuration 100%PAR Testedfor GuaranteedOutput Power Capability CASE465H--02,STYLE1 CharacterizedwithLarge--SignalLoad--PullParameters andCommon NI--780S--4 SourceS--Parameters MRF8P26080HSR3 Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RF /V RF /V 31 inA GSA outA DSA Designedfor DigitalPredistortionError CorrectionSystems RoHSCompliant InTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13inchReel. RF /V42 RF /V inB GSB outB DSB For R5TapeandReeloption, seep. 13. (TopView) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J CW Operation T =25C CW 140 W C Derateabove25C 1.26 W/C 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature77C,14W CW,28Vdc,I =300mA,V =1.3Vdc,2620MHz 0.88 DQA GSB (3) CaseTemperature90C,80W CW ,28Vdc,I =300mA,V =1.3Vdc,2620MHz 0.56 DQA GSB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (4) OnCharacteristics GateThresholdVoltage V 1.0 1.8 2.5 Vdc GS(th) (V =10Vdc,I =75 Adc) DS D GateQuiescentVoltage V 1.9 2.6 3.4 Vdc GS(Q) (V =28Vdc,I =300mAdc,MeasuredinFunctionalTest) DD DA Drain--SourceOn--Voltage V 0.1 0.23 0.3 Vdc DS(on) (V =10Vdc,I =0.75Adc) GS D (5,6) FunctionalTests (InFreescaleDoherty ProductionTestFixture,50ohm system)V =28Vdc,I =300mA,V =1.3Vdc, DD DQA GSB P =14W Avg.,f=2620MHz,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF. out ACPRmeasuredon3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 13.8 15.0 16.8 dB ps DrainEfficiency 34.0 36.9 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 6.4 6.8 dB AdjacentChannelPowerRatio ACPR --40.0 --33.0 dBc (6) TypicalBroadbandPerformance (InFreescaleDoherty CharacterizationTestFixture,50ohm system)V =28Vdc,I =300mA, DD DQA V =1.3Vdc,P =14W Avg.,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability on GSB out CCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2570MHz 15.4 39.1 6.8 --33.6 2595MHz 15.2 38.2 6.8 --36.0 2620MHz 15.0 36.9 6.8 --40.0 1. MTTFcalculatoravailableat