DocumentNumber:MRF8P8300H
FreescaleSemiconductor
Rev. 1, 4/2013
TechnicalData
RFPowerFieldEffectTransistors
N--Channel Enhancement--ModeLateral MOSFETs
MRF8P8300HR6
Designed for W--CDMA and LTE base station applications with frequencies
MRF8P8300HSR6
from750to820MHz.CanbeusedinClassABandClassCforalltypical
cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: V =28Volts,I =
DD DQ
2000 mA, P = 96 Watts Avg., IQ Magnitude Clipping, Channel
750--820MHz,96WAVG.,28V
out
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
SINGLEW--CDMA
onCCDF.
LATERALN--CHANNEL
RFPOWERMOSFETs
G OutputPAR ACPR
ps D
Frequency (dB) (%) (dB) (dBc)
790 MHz 20.9 35.2 6.2 --38.1
805 MHz 21.0 35.5 6.2 --38.1
820 MHz 20.9 35.7 6.1 --38.2
Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output
Power (3 dB Input Overdrive from Rated P ), Designed for
out
NI--1230--4H
Enhanced Ruggedness
MRF8P8300HR6
Typical P @ 1 dB Compression Point 340Watts CW
out
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matchedfor Easeof Use
IntegratedESD Protection
NI--1230--4S
Greater Negative Gate--Source Voltage Range for Improved Class C
MRF8P8300HSR6
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Table1.MaximumRatings RF /V31 RF /V
inA GSA outA DSA
Rating Symbol Value Unit
Drain--Source Voltage V --0.5, +70 Vdc
DSS
RF /V42 RF /V
inB GSB outB DSB
Gate--Source Voltage V --6.0, +10 Vdc
GS
Operating Voltage V 32, +0 Vdc
DD
StorageTemperature Range T --65 to +150 C
stg (Top View)
Case Operating Temperature T 150 C Figure1.PinConnections
C
(1,2)
OperatingJunctionTemperature T 225 C
J
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
ThermalResistance, Junction to Case R C/W
JC
Case Temperature 80C, 96W CW, 28Vdc, I =2000 mA, 820 MHz 0.26
DQ
Case Temperature 85C, 300W CW, 28Vdc, I =2000 mA, 820 MHz 0.21
DQ
1. Continuous useat maximum temperaturewillaffect MTTF.
2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics
TestMethodology Class
Human Body Model(perJESD22--A114) 2
Machine Model(perEIA/JESD22--A115) A
Charge Device Model(perJESD22--C101) IV
Table4.ElectricalCharacteristics (T =25 C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(1)
OffCharacteristics
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V =70Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 1 Adc
DSS
(V =28Vdc,V =0Vdc)
DS GS
Gate--Source Leakage Current I 1 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
OnCharacteristics
(1)
GateThresholdVoltage V 1.5 2.3 3.0 Vdc
GS(th)
(V =10Vdc,I =400 Adc)
DS D
Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc
GS(Q)
(V =28Vdc,I =2000 mA, Measured in FunctionalTest)
DD DQ
(1)
Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V =10Vdc,I =3Adc)
GS D
(2)
FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =2000 mA, P =96W Avg.,f=820MHz,
DD DQ out
Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR=7.5 dB @ 0.01%Probability on CCDF. ACPRmeasured in 3.84 MHz
ChannelBandwidth@ 5MHzOffset.
PowerGain G 20.0 20.9 23.5 dB
ps
Drain Efficiency 34.5 35.7 %
D
Output Peak--to--Average Ratio @0.01%Probability on CCDF PAR 5.9 6.1 dB
Adjacent ChannelPowerRatio ACPR --38.2 --36.5 dBc
Input Return Loss IRL --12 --9 dB
TypicalPerformanceoverFrequency(InFreescaleTestFixture,50ohm system)V =28Vdc,I =2000 mA, P =96WAvg.,
DD DQ out
Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR=7.5 dB @ 0.01%Probability on CCDF. ACPRmeasured in 3.84 MHz
ChannelBandwidth@ 5MHzOffset.
G OutputPAR ACPR IRL
ps D
Frequency (dB) (%) (dB) (dBc) (dB)
790 MHz 20.9 35.2 6.2 --38.1 --11
805 MHz 21.0 35.5 6.2 --38.1 --12
820 MHz 20.9 35.7 6.1 --38.2 --12
1. Each side of device measured separately.
2. Part internally matched both on input and output.
(continued)
MRF8P8300HR6MRF8P8300HSR6
RF DeviceData
Freescale Semiconductor, Inc.
2