X-On Electronics has gained recognition as a prominent supplier of ARF469AG RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. ARF469AG RF MOSFET Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

ARF469AG Microchip

ARF469AG electronic component of Microchip
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See Product Specifications
Part No.ARF469AG
Manufacturer: Microchip
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors FG, MOSFET, 500V, TO-264, RoHS
Datasheet: ARF469AG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 72.519 ea
Line Total: USD 1812.98 
Availability - 0
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 25
Multiples : 25
25 : USD 72.519

   
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We are delighted to provide the ARF469AG from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ARF469AG and other electronic components in the RF MOSFET Transistors category and beyond.

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ARF469AG ARF469BG TO-264 Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 350W 45MHz The ARF469A and ARF469B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. Low Cost Common Source RF Package. Specified 150 Volt, 40.68 MHz Characteristics: Low Vth thermal coefficient. Output Power = 350 Watts. Low Thermal Resistance. Gain = 16dB (Class AB) Optimized SOA for Superior Ruggedness. Efficiency = 75% (Class C) MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter Ratings UNIT V Drain-Source Voltage 500 DSS Volts V Drain-Gate Voltage 500 DGO I Continuous Drain Current T = 25C Amps 30 D C V Gate-Source Voltage Volts 30 GS Total Power Dissipation T = 25C P Watts 445 C D Junction to Case R C/W 0.28 JC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 Volts DSS GS D 1 , R Drain-Source On-State Resistance (V = 10V I = 15A) ohms 0.25 0.28 DS(ON) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 250 DS GS C Gate-Source Leakage Current (V = 30V, V = 0V) I 100 nA GS DS GSS g Forward Transconductance (V = 25V, I = 6.5A) mhos 8 fs DS D Gate Threshold Voltage (V = V , I = 1mA) Volts V (TH) 2 4 DS GS D GS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS ARF469AG BG Symbol Characteristic Test Conditions MIN TYP MAX UNIT Input Capacitance C V = 0V 2300 iss GS V = 150V Output Capacitance pF C DS 250 oss f = 1 MHz Reverse Transfer Capacitance C 125 rss FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 40.68 MHz 14 16 dB PS V = 2.5V V = 150V 70 75 Drain Efficiency GS DD % P = 350W out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380S, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 20 10,000 V > I (ON) x R (ON)MAX. DS D DS 18 250SEC. PULSE TEST <0.5 % DUTY CYCLE C iss 16 T = -55C J 14 1,000 12 10 C oss 8 C 100 rss 6 T = -55C J 4 T = +25C J 2 T = +125C J 10 0 0 1 2 3 4 5 6 7 8 0 100 200 300 400 500 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , GATE-TO-SOURCE VOLTAGE (VOLTS) DS GS Figure 2, Typical Transfer Characteristics Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 8 7 6 5 4 3 2 1 0 -50 0 50 100 150 T , CASE TEMPERATURE (C) C Figure 3, Typical Maximum Safe Operating Area Figure 4, Typical Threshold Voltage vs Temperature 050-4983 Rev B 2-2021 CAPACITANCE (pf) I , DRAIN CURRENT (AMPERES) V , THRESHOLD VOLTAGE D GS(th) (NORMALIZED)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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