DocumentNumber:MRF6V2300N FreescaleSemiconductor Rev. 5, 4/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V2300NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2300NBR1 frequenciesupto600MHz.Devicesareunmatchedandaresuitableforusein industrial, medical andscientific applications. Typical CW Performance: V =50Volts,I = 900mA, DD DQ 10--600MHz,300W,50V P = 300Watts, f = 220MHz out LATERALN--CHANNEL Power Gain 25.5dB SINGLE--ENDED Drain Efficiency 68% BROADBAND Capableof Handling10:1VSWR, 50Vdc, 220MHz, 300Watts CW RFPOWERMOSFETs Output Power Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CASE1486--03,STYLE1 TO--270 WB--4 QualifiedUptoaMaximum of 50V Operation DD PLASTIC IntegratedESD Protection MRF6V2300NR1 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. CASE1484--04,STYLE1 TO--272 WB--4 PLASTIC MRF6V2300NBR1 PARTSARESINGLE--ENDED Table1.MaximumRatings Rating Symbol Value Unit RF /V RF /V Drain--Source Voltage V --0.5,+110 Vdc in GS out DS DSS Gate--SourceVoltage V --0.5,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg RF /V RF /V in GS out DS CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J (Top View) Table2.ThermalCharacteristics Note: Exposedbacksideofthepackageis (2,3) Characteristic Symbol Value Unit thesourceterminalforthetransistor. ThermalResistance,JunctiontoCase Figure1.PinConnections CaseTemperature83C, 300W CW R 0.24 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =150mA,V =0Vdc) D GS Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 1.63 3 Vdc GS(th) (V =10Vdc,I =800Adc) DS D GateQuiescentVoltage V 1.5 2.6 3.5 Vdc GS(Q) (V =50Vdc,I =900mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =2Adc) GS D DynamicCharacteristics ReverseTransferCapacitance C 2.88 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 120 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 268 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =900mA,P =300W,f=220MHz,CW DD DQ out PowerGain G 24 25.5 27 dB ps Drain Efficiency 66 68 % D Input ReturnLoss IRL --16 --9 dB TypicalPerformances(InFreescale27MHz and450MHz TestFixtures,50ohm system)V =50Vdc,I =900mA,P =300W CW DD DQ out PowerGain f =27 MHz G 31.4 dB ps f=450MHz 21.7 Drain Efficiency f =27 MHz 61.5 % D f=450MHz 59.1 Input ReturnLoss f =27MHz IRL --17.4 dB f=450MHz --24.4 ATTENTION: TheMRF6V2300NandMRF6V2300NB arehighpowerdevices andspecialconsiderations must befollowedinboarddesignandmounting. Incorrect mountingcanleadtointernaltemperatures which exceedthemaximum allowableoperatingjunctiontemperature. RefertoFreescaleApplication NoteAN3263 (forbolt downmounting)orAN1907 (forsolderreflowmounting)PRIORTOSTARTINGSYSTEMDESIGNto ensurepropermountingofthesedevices. MRF6V2300NR1MRF6V2300NBR1 RF DeviceData FreescaleSemiconductor 2