X-On Electronics has gained recognition as a prominent supplier of MRF6V2300NBR1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF6V2300NBR1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF6V2300NBR1 NXP

MRF6V2300NBR1 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.MRF6V2300NBR1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: NXP Freescale RF MOSFET Transistors VHV6 300W TO272WB4N
Datasheet: MRF6V2300NBR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 159.8904
5 : USD 156.7821
10 : USD 155.9068
25 : USD 149.297
50 : USD 147.2418
100 : USD 147.0895
250 : USD 147.0895
N/A

Obsolete
   
Manufacturer
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RoHS - XON
Icon ROHS
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Vds - Drain-Source Breakdown Voltage
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Minimum Operating Temperature
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Vgs - Gate-Source Voltage
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Mxhts
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We are delighted to provide the MRF6V2300NBR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF6V2300NBR1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF6V2300N FreescaleSemiconductor Rev. 5, 4/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V2300NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2300NBR1 frequenciesupto600MHz.Devicesareunmatchedandaresuitableforusein industrial, medical andscientific applications. Typical CW Performance: V =50Volts,I = 900mA, DD DQ 10--600MHz,300W,50V P = 300Watts, f = 220MHz out LATERALN--CHANNEL Power Gain 25.5dB SINGLE--ENDED Drain Efficiency 68% BROADBAND Capableof Handling10:1VSWR, 50Vdc, 220MHz, 300Watts CW RFPOWERMOSFETs Output Power Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CASE1486--03,STYLE1 TO--270 WB--4 QualifiedUptoaMaximum of 50V Operation DD PLASTIC IntegratedESD Protection MRF6V2300NR1 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. CASE1484--04,STYLE1 TO--272 WB--4 PLASTIC MRF6V2300NBR1 PARTSARESINGLE--ENDED Table1.MaximumRatings Rating Symbol Value Unit RF /V RF /V Drain--Source Voltage V --0.5,+110 Vdc in GS out DS DSS Gate--SourceVoltage V --0.5,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg RF /V RF /V in GS out DS CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J (Top View) Table2.ThermalCharacteristics Note: Exposedbacksideofthepackageis (2,3) Characteristic Symbol Value Unit thesourceterminalforthetransistor. ThermalResistance,JunctiontoCase Figure1.PinConnections CaseTemperature83C, 300W CW R 0.24 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =150mA,V =0Vdc) D GS Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 1.63 3 Vdc GS(th) (V =10Vdc,I =800Adc) DS D GateQuiescentVoltage V 1.5 2.6 3.5 Vdc GS(Q) (V =50Vdc,I =900mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =2Adc) GS D DynamicCharacteristics ReverseTransferCapacitance C 2.88 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 120 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 268 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =900mA,P =300W,f=220MHz,CW DD DQ out PowerGain G 24 25.5 27 dB ps Drain Efficiency 66 68 % D Input ReturnLoss IRL --16 --9 dB TypicalPerformances(InFreescale27MHz and450MHz TestFixtures,50ohm system)V =50Vdc,I =900mA,P =300W CW DD DQ out PowerGain f =27 MHz G 31.4 dB ps f=450MHz 21.7 Drain Efficiency f =27 MHz 61.5 % D f=450MHz 59.1 Input ReturnLoss f =27MHz IRL --17.4 dB f=450MHz --24.4 ATTENTION: TheMRF6V2300NandMRF6V2300NB arehighpowerdevices andspecialconsiderations must befollowedinboarddesignandmounting. Incorrect mountingcanleadtointernaltemperatures which exceedthemaximum allowableoperatingjunctiontemperature. RefertoFreescaleApplication NoteAN3263 (forbolt downmounting)orAN1907 (forsolderreflowmounting)PRIORTOSTARTINGSYSTEMDESIGNto ensurepropermountingofthesedevices. MRF6V2300NR1MRF6V2300NBR1 RF DeviceData FreescaleSemiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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