DocumentNumber:MRF6VP121KH FreescaleSemiconductor Rev. 3, 4/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6VP121KHR6 RF Powertransistors designedfor applications operating at frequencies MRF6VP121KHSR6 between965and1215MHz. Thesedevices aresuitablefor useinpulsed applications. TypicalPulsedPerformance: V =50Volts,I = 150mA, P = DD DQ out 1000Watts Peak (100W Avg.), f = 1030MHz, PulseWidth= 128sec, 965--1215MHz,1000W,50V Duty Cycle= 10% LATERALN--CHANNEL Power Gain 20dB BROADBAND DrainEfficiency 56% RFPOWERMOSFETs Capableof Handling5:1VSWR, 50Vdc, 1030MHz, 1000Watts Peak Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use Operation QualifiedUptoaMaximum of 50V DD IntegratedESD Protection CASE375D--05,STYLE1 Designedfor Push--PullOperation NI--1230 Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MRF6VP121KHR6 Operation RoHSCompliant InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. CASE375E--04,STYLE1 NI--1230S MRF6VP121KHSR6 PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (TopView) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase Z C/W JC CaseTemperature67C,1000W Pulsed,128sec PulseWidth,10%Duty Cycle, 0.02 50Vdc,I =150mA DQ CaseTemperature62C,Mode--S PulseTrain,80Pulses of32sec On,18sec 0.07 Off,RepeatedEvery 40msec,6.4%OverallDuty Cycle,50Vdc,I =150mA DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B (Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (V =0Vdc,I =165mA) GS D ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 100 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 0.9 1.6 2.4 Vdc GS(th) (V =10Vdc,I =1000Adc) DS D (4) GateQuiescentVoltage V 1.5 2.2 3 Vdc GS(Q) (V =50Vdc,I =150mAdc,MeasuredinFunctionalTest) DD D (3) Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =2.7Adc) GS D (3) DynamicCharacteristics ReverseTransferCapacitance C 1.27 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 86.7 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 539 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS (4) FunctionalTests (InFreescaleTestFixture,50ohm system)V =50Vdc,I =150mA,P =1000W Peak (100W Avg.), DD DQ out f=1030MHz,128sec PulseWidth,10%Duty Cycle PowerGain G 19 20 22 dB ps DrainEfficiency 54 56 % D InputReturnLoss IRL --23 --9 dB 1. MTTFcalculatoravailableat