DocumentNumber:MRF7S21170H Freescale Semiconductor Rev. 7, 2/2012 Technical Data RFPowerFieldEffectTransistors MRF7S21170HR3 N--Channel Enhancement--Mode Lateral MOSFETs MRF7S21170HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobeused inClass ABandClass C forPCN--PCS/cellularradioandWLLapplications. 2110--2170MHz,50WAVG.,28V Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ SINGLEW--CDMA 1400 mA, P = 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, out LATERALN--CHANNEL Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. RFPOWERMOSFETs Power Gain 16 dB Drain Efficiency 31% Device Output Signal PAR 6.1 dB 0.01% Probability on CCDF ACPR 5 MHz Offset --37 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, 32 Vdc, 2140 MHz, 170 Watts CW Output Power P 1 dB Compression Point 170 Watts CW out Features 100% PAR Tested for Guaranteed Output Power Capability CASE465B--04 NI--880 Characterized with Series Equivalent Large--Signal Impedance Parameters MRF7S21170HR3 Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. CASE465C--03 NI--880S MRF7S21170HSR3 Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 80C, 170 W CW 0.31 Case Temperature 73C, 25 W CW 0.36 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A Machine Model(perEIA/JESD22--A115) B Charge Device Model(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =372 Adc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V =28Vdc,I =1400 mAdc) DS D (1) Fixture Gate Quiescent Voltage V 4.5 5.4 6.5 Vdc GG(Q) (V =28Vdc,I =1400 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =3.72Adc) GS D (2) DynamicCharacteristics Reverse TransferCapacitance C 0.9 pF rss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 703 pF oss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS FunctionalTests(In Freescale Test Fixture, 50 ohm system)V =28Vdc,I =1400 mA, P =50 W Avg., f =2167.5 MHz, DD DQ out Single--CarrierW--CDMA, IQ Magnitude Clipping, Input SignalPAR =7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 15 16 18 dB ps Drain Efficiency 29 31 % D Output Peak--to--Average Ratio 0.01% Probability on CCDF PAR 5.7 6.1 dB Adjacent ChannelPowerRatio ACPR --37 --35 dBc Input Return Loss IRL --15 --9 dB 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at