X-On Electronics has gained recognition as a prominent supplier of MRF7S21170HSR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF7S21170HSR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF7S21170HSR3 NXP

MRF7S21170HSR3 electronic component of NXP
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Part No.MRF7S21170HSR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
Datasheet: MRF7S21170HSR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 234.5557 ea
Line Total: USD 234.56 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MRF7S21170HSR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF7S21170HSR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF7S21170H Freescale Semiconductor Rev. 7, 2/2012 Technical Data RFPowerFieldEffectTransistors MRF7S21170HR3 N--Channel Enhancement--Mode Lateral MOSFETs MRF7S21170HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobeused inClass ABandClass C forPCN--PCS/cellularradioandWLLapplications. 2110--2170MHz,50WAVG.,28V Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ SINGLEW--CDMA 1400 mA, P = 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, out LATERALN--CHANNEL Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. RFPOWERMOSFETs Power Gain 16 dB Drain Efficiency 31% Device Output Signal PAR 6.1 dB 0.01% Probability on CCDF ACPR 5 MHz Offset --37 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, 32 Vdc, 2140 MHz, 170 Watts CW Output Power P 1 dB Compression Point 170 Watts CW out Features 100% PAR Tested for Guaranteed Output Power Capability CASE465B--04 NI--880 Characterized with Series Equivalent Large--Signal Impedance Parameters MRF7S21170HR3 Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. CASE465C--03 NI--880S MRF7S21170HSR3 Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 80C, 170 W CW 0.31 Case Temperature 73C, 25 W CW 0.36 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A Machine Model(perEIA/JESD22--A115) B Charge Device Model(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =372 Adc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V =28Vdc,I =1400 mAdc) DS D (1) Fixture Gate Quiescent Voltage V 4.5 5.4 6.5 Vdc GG(Q) (V =28Vdc,I =1400 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =3.72Adc) GS D (2) DynamicCharacteristics Reverse TransferCapacitance C 0.9 pF rss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 703 pF oss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS FunctionalTests(In Freescale Test Fixture, 50 ohm system)V =28Vdc,I =1400 mA, P =50 W Avg., f =2167.5 MHz, DD DQ out Single--CarrierW--CDMA, IQ Magnitude Clipping, Input SignalPAR =7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 15 16 18 dB ps Drain Efficiency 29 31 % D Output Peak--to--Average Ratio 0.01% Probability on CCDF PAR 5.7 6.1 dB Adjacent ChannelPowerRatio ACPR --37 --35 dBc Input Return Loss IRL --15 --9 dB 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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