DocumentNumber:MRF6VP3091N FreescaleSemiconductor Rev. 1, 12/2011 TechnicalData RFPowerLDMOSTransistors MRF6VP3091NR1 Enhancement--ModeLateral MOSFETs MRF6VP3091NR5 Designed for commercial and industrial broadband applications with MRF6VP3091NBR1 frequenciesfrom470to860MHz.Devicesaresuitableforuseinbroadcast applications. MRF6VP3091NBR5 TypicalPerformance(BroadbandReferenceCircuit): V =50Volts, DD I = 450mA, 64QAM, Input SignalPAR = 9.5dB 0.01%Probability DQ onCCDF. Output IMD 470--860MHz,90W,50V P f G SignalPAR Shoulder out ps D BROADBAND SignalType (W) (MHz) (dB) (%) (dB) (dBc) RFPOWERLDMOSTRANSISTORS DVB--T(8k OFDM) 18Avg. 470 21.8 31.0 7.9 --27.8 650 21.6 26.4 8.4 --37.6 CASE1486--03,STYLE1 860 21.7 27.6 7.1 --30.4 TO--270 WB--4 PLASTIC Features MRF6VP3091NR1(NR5) Capableof Handling10:1VSWR, AllPhaseAngles, 50Vdc, 860MHz, 90Watts CW Output Power CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Input Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD Excellent ThermalStability CASE1484--04,STYLE1 DevicecanbeusedSingle--Endedor inaPush--PullConfiguration TO--272 WB--4 IntegratedESD Protection PLASTIC Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MRF6VP3091NBR1(NBR5) Operation PARTSAREPUSH--PULL 225C CapablePlastic Package InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. R5Suffix = 50Units, 56mm TapeWidth, 13inchReel. Gate1 Drain1 Table1.MaximumRatings Gate2 Drain2 Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+115 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS (TopView) StorageTemperatureRange T --65to+150 C stg Note: Exposedbacksideofthepackageis thesourceterminalforthetransistor. CaseOperatingTemperature T 150 C C (1,2) Figure1.PinConnections OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature76C,18W CW,50Vdc,I =350mA,860MHz 0.79 DQ CaseTemperature80C,90W CW,50Vdc,I =350mA,860MHz 0.82 DQ 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(2001--4000V) MachineModel(perEIA/JESD22--A115) B (201--400V) ChargeDeviceModel(perJESD22--C101) IV (>1000V) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--SourceLeakageCurrent I 0.5 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 115 Vdc (BR)DSS (I =50mA,V =0Vdc) D GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (1) GateThresholdVoltage V 0.9 1.6 2.4 Vdc GS(th) (V =10Vdc,I =100 Adc) DS D GateQuiescentVoltage V 2.0 2.7 3.5 Vdc GS(Q) (V =50Vdc,I =350mAdc,MeasuredinFunctionalTest) DD D (1) Drain--SourceOn--Voltage V 0.2 Vdc DS(on) (V =10Vdc,I =0.25Adc) GS D DynamicCharacteristics (2) ReverseTransferCapacitance C 41 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS (2) OutputCapacitance C 65.4 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS (2) InputCapacitance C 591 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleSingle--EndedNarrowbandTestFixture,50ohm system)V =50Vdc,I =350mA,P =18WAvg., DD DQ out f=860MHz,DVB--T(8k OFDM)SingleChannel.ACPRmeasuredin7.61MHz ChannelBandwidth 4MHz Offset 4kHz Bandwidth. PowerGain G 21.0 22.0 24.0 dB ps DrainEfficiency 27.5 28.5 % D AdjacentChannelPowerRatio ACPR --62.0 --60.0 dBc InputReturnLoss IRL --14 --9 dB 1. Eachsideofdevicemeasuredseparately. 2. Partinternally inputmatched. MRF6VP3091NR1MRF6VP3091NR5MRF6VP3091NBR1MRF6VP3091NBR5 RF DeviceData FreescaleSemiconductor, Inc. 2