DocumentNumber:MRF6VP41KH
FreescaleSemiconductor
Rev. 6, 4/2012
Technical Data
RFPowerFieldEffectTransistors
MRF6VP41KHR6
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6VP41KHSR6
Designed for pulse and CW wideband applications with frequencies up to
500MHz.Devicesareunmatchedandaresuitableforuseinindustrial,
medical and scientific applications. 10--500MHz,1000W,50V
LATERALN--CHANNEL
Typical Pulse Performance at 450 MHz: V =50Volts,I = 150 mA,
DD DQ
BROADBAND
P = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec,
out
Duty Cycle= 20% RFPOWERMOSFETs
Power Gain 20 dB
Drain Efficiency 64%
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
CASE375D--05,STYLE1
Qualified Up to a Maximum of 50 V Operation
DD
NI--1230
Integrated ESD Protection MRF6VP41KHR6
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
CASE375E--04,STYLE1
NI--1230S
MRF6VP41KHSR6
PARTSAREPUSH--PULL
RF /V31 RF /V
inA GSA outA DSA
RF /V42 RF /V
inB GSB outB DSB
(Top View)
Figure1.PinConnections
Table1.MaximumRatings
Rating Symbol Value Unit
Drain--Source Voltage V --0.5, +110 Vdc
DSS
Gate--Source Voltage V --6, +10 Vdc
GS
Storage Temperature Range T --65 to +150 C
stg
Case Operating Temperature T 150 C
C
(1,2)
Operating Junction Temperature T 225 C
J
(3)
TotalDevice Dissipation @ T =25C, CW only P 1333 W
C D
1. Continuous use at maximum temperature willaffect MTTF.
2. MTTFcalculatoravailable at Table2.ThermalCharacteristics
(1,2)
Characteristic Symbol Value Unit
ThermalImpedance, Junction to Case Z 0.03 C/W
JC
Pulse: Case Temperature 80C, 1000 W Peak, 100 sec Pulse Width, 20%Duty Cycle,
(3)
450 MHz
ThermalResistance, Junction to Case R 0.15 C/W
JC
CW: Case Temperature 84C, 1000 W CW, 352.2 MHz
Table3.ESDProtectionCharacteristics
TestMethodology Class
Human Body Model(perJESD22--A114) 2, passes 2000 V
Machine Model(perEIA/JESD22--A115) A, passes 125 V
Charge Device Model(perJESD22--C101) IV, passes 2000 V
Table4.ElectricalCharacteristics (T =25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(4)
OffCharacteristics
Gate--Source Leakage Current I 10 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
Drain--Source Breakdown Voltage V 110 Vdc
(BR)DSS
(I =300 mA, V =0Vdc)
D GS
Zero Gate Voltage Drain Leakage Current I 100 Adc
DSS
(V =50Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 5 mA
DSS
(V =100 Vdc, V =0Vdc)
DS GS
OnCharacteristics
(4)
Gate Threshold Voltage V 1 1.68 3 Vdc
GS(th)
(V =10Vdc,I =1600 Adc)
DS D
(5)
Gate Quiescent Voltage V 1.5 2.2 3.5 Vdc
GS(Q)
(V =50Vdc,I =150 mAdc, Measured in FunctionalTest)
DD D
(4)
Drain--Source On--Voltage V 0.28 Vdc
DS(on)
(V =10Vdc,I =4Adc)
GS D
(4)
DynamicCharacteristics
Reverse TransferCapacitance C 3.3 pF
rss
(V =50Vdc 30 mV(rms)ac @ 1 MHz, V =0Vdc)
DS GS
Output Capacitance C 147 pF
oss
(V =50Vdc 30 mV(rms)ac @ 1 MHz, V =0Vdc)
DS GS
Input Capacitance C 506 pF
iss
(V =50Vdc,V =0Vdc 30 mV(rms)ac @ 1 MHz)
DS GS
(5)
FunctionalTests (In Freescale Test Fixture, 50 ohm system) V =50Vdc,I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 450 MHz,
DD DQ out
100 sec Pulse Width, 20% Duty Cycle
PowerGain G 19 20 22 dB
ps
Drain Efficiency 60 64 %
D
Input Return Loss IRL --18 --9 dB
1. MTTFcalculatoravailable at